7142SA55C

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	48-DIP (0.600", 15.24mm)
Supplier Device Package:	48-SIDE BRAZED
Base Part Number:	IDT7142

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Introduction to 7142SA55C Memory

Memory has revolutionized humanity in many areas for many decades. 7142SA55C is a type of semiconductor memory, consisting of an array of static FLASH memory cells that offer enhanced data access and cache memory, providing high-performance memory solutions. This memory device is widely used in a variety of applications, ranging from consumer and automotive electronics, as well as industrial and medical applications.

7142SA55C Application Fields

The 7142SA55C memory is usually used in the consumer electronics, automotive electronics, and industrial fields to store program data, ensuring faster process and recharging operations. In consumer electronic applications, this semiconductor memory is used for a broad range of applications such as music player and audio systems, gaming consoles, DVD players, cameras, e-book readers, PDAs and smartphones.In automotive applications, 7142SA55C memory is used to store data of warning systems, navigation systems, entertainment systems, climate control systems, and various other systems. This memory device is available in various integrated packages such as Ball Grid Arrays(BGA) packages, for meeting specific application requirements in the automotive sector.In industrial applications, this semiconductor memory is widely used for digital energy meters and Industrial Process Control systems. This memory is capable of operating in high temperature environment, which helps for increased reliability and reduced maintenance costs.

Working Principle of 7142SA55C Memory

The 7142SA55C memory has a working principle that involves employing a double gate floating gate field-effect transistor (DG-FET) as a storage element to store information. It utilizes a two-bit cell stored in two ferroelectric memory elements, allowing it to store two bits of information in the same cell.The storage arrays are organized into rows and columns, in which each cell holds one bit of data. The memory cells in the array are accessed with the use of row and column multiplexers. The row and column multiplexers are responsible for writing and reading data from the cells in the array by turning individual elements on and off.The chip contains an internal latch circuit that allows it to write data from the main memory array to the chip\'s cache memory. It also contains other logic circuits such as address buffers, status register and timing logic, enabling the chip to synchronize timing signals and access the data.

Conclusion

The 7142SA55C memory is a highly efficient and reliable memory device that offers high performance in various applications. It is used in consumer, automotive and industrial applications, as it offers an extremely fast data access rate and cache memory, for increased efficiency and enhanced performance. Its working principle involves a double-gate floating gate field-effect transistor, aiding in the storage of two bits of information in the same cell.This memory chip offers high speed performance and is known for its reliability and increased operating temperature. It is also easy to install and has low power consumption, offering great value for money. This has made it one of the most popular memory solutions on the market today.

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