7143SA90J

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	32Kb (2K x 16)
Write Cycle Time - Word, Page:	90ns
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	68-LCC (J-Lead)
Supplier Device Package:	68-PLCC (24.21x24.21)
Base Part Number:	IDT7143

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Introduction

7143SA90J is a Memory products developed by the leading semiconductor company, Taiwan Semiconductor Manufacturing Company (TSMC). It is an integrated circuit that is used in memory-intensive applications such as embedded systems, networking and storage applications.7143SA90J features a wide variety of memory architectures and memory operating conditions with a peak frequency of over 1 GHz. It is well suited for data processing, telecommunications, digital media and graphics applications.

Architecture

7143SA90J is a multi-level memory architecture which implements multiple abstract memory levels such as caches, shared memory and DRAMs. The architecture consists of four sections that can be configured independently depending on the requirements of the application. The cache is in charge of the data caching while the shared memory is responsible of data movement. The DRAM is responsible of data storage and retrieval.

Memory Operation

7143SA90J memory operates as an asynchronous memory system that is designed to run at extremely high speeds with minimal electricity consumption. The memory is designed to be able to handle large amounts of data quickly, efficiently and accurately. It is capable of transferring data at a rate of up to 1 Gigabyte per second. The memory can access data from any device connected to the system, regardless of the size of the data.

Connectivity

7143SA90J is well-suited for connecting numerous memory devices within large or distributed systems. It features an interface that supports high-speed parallel data buses, allowing for interconnectivity with other devices. It also provides for an ultra low-latency platform for high throughput in a large scale system.

Power Efficiency

7143SA90J is designed to offer superior power efficiency compared to other memory products. Its power consumption is able to reach down to 0.9 Watts at a given clock speed. This is significantly lower than any other memory product of its kind. The power efficiency is achieved through careful design of the individual blocks inside the memory and through the implementation of advanced power saving techniques.

Other Features

7143SA90J also offers several other features such as media synchronization, memory protection and support for numerous memory technologies. Media synchronization allows for the sharing of data across multiple host devices. Memory protection is another important feature for securing the data during transfers. Lastly, the device supports a wide array of memory technologies, such as DDR4 and GDDR5, which provides high bandwidth performance.

Conclusion

7143SA90J is an advanced memory product with a wide range of features and capabilities. It is well-suited for applications that require a combination of high-speed, power efficiency and connectivity. Its multi-level memory architecture and memory operations make it a perfect choice for applications in embedded systems, networking and storage applications.

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