7143SA35J Allicdata Electronics
Allicdata Part #:

7143SA35J-ND

Manufacturer Part#:

7143SA35J

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 68PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (2K ...
DataSheet: 7143SA35J datasheet7143SA35J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)
Base Part Number: IDT7143
Description

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Memory – 7143SA35J Application Field and Working Principle

7143SA35J is an advanced memory chip from the series of Tokyo Electron Device (TED) DRAM chips. This DRAM series comprises of multiple variants, including DDR2 and DDR3 memories, having excellent performance at competitive prices. Therefore, it has become one of the most important components on consumer electronics industry. 7143SA35J is a high performance memory chip widely used in mobile phones, tablets, and notebook personal computers.

7143SA35J has a 64Mbit capacity, a maximum speed of 400MHz and a bandwidth of 800Mbps respectively. It also offers a high level of integrated protection, making it one of the most reliable DRAMs in the market. This chip provides an efficient and secure way of storing data and allows direct connections to the operating system, making it an ideal component for mobile phones and tablets.

The functional principle of the 7143SA35J is based on dynamic random access memory technology or DRAM. DRAM is a type of memory chip that stores data in the form of electrical charges on a capacitor located in each cell of the memory. The functioning of DRAM is based on the idea of refreshing the data held on the capacitor, so that it remains unchanged. When power is applied to the chip, the content of each capacitor is read-out into a metal oxide semiconductor, which is then used to produce an appropriate voltage level to represent the data stored in each cell.

The data is then transferred to the operating system through a driver, and the extracted data may be reused or discarded. As the data remains stored in the memory, it can be quickly retrieved when the need arises. This enables the chip’s low-power operation and fast data access ability. Furthermore, the data stored in the 7143SA35J memory is also protected against unexpected spike power cuts.

The 7143SA35J memory chip also offers several advantages compared to other DRAMs. It has low power consumption and quick data transfer speeds, which is extremely beneficial for mobile phone and tablet applications. In addition, the chip has integrated error detection features and built-in security features that protect the data from corruption.

In conclusion, 7143SA35J is an advanced memory chip that is widely used in mobile phones, tablets and notebooks. Its high capacity, speed and data-protection features make it an ideal choice for many applications. Furthermore, the chip’s low power consumption and fast data access speed make it an efficient and reliable choice.

The specific data is subject to PDF, and the above content is for reference

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