7164L25DB Allicdata Electronics
Allicdata Part #:

7164L25DB-ND

Manufacturer Part#:

7164L25DB

Price: $ 13.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 28CERDIP
More Detail: SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parall...
DataSheet: 7164L25DB datasheet7164L25DB Datasheet/PDF
Quantity: 1000
169 +: $ 11.89940
Stock 1000Can Ship Immediately
$ 13.09
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip
Description

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Memory is a major computer component used to store data and instructions, which is necessary for computers to process information. Memory is commonly divided into two categories: static memory (SRAM) and dynamic memory (DRAM). 7164L25DB is a type of dynamic memory that can be used in a variety of applications.

The 7164L25DB is a 25-bit dual-ported static random access memory (SRAM). It has a total capacity of 64KB, with a random-access time of 6ns. The SRAM is manufactured using a 0.8 micron CMOS technology and is capable of operating at a clock frequency of 20MHz. It has two separate ports, each of which can be used independently by two devices. The 7164L25DB is a low-power device, consuming less than 0.3 Watts at a supply voltage of 3.3V.

The 7164L25DB can be used in a wide range of applications, including embedded applications, system-on-chip (SoC) designs, real time systems, telecommunications, industrial and medical systems. The device has a wide range of features, such as an internal address multiplexer, an instruction set with pre-fetch, and support for streaming instructions. It also has an integrated clock, allowing it to access data faster than most standard memories.

The working principle of the 7164L25DB is based on the principles of static random access memory (SRAM). SRAM works by storing a single bit of data in a static circuit. This static circuit is made up of a small transistor and capacitor, which are connected together in a particular way. The capacitor is used to store charge, and the transistor is used to control the amount of charge stored. When the transistor is switched on, the capacitor will store the bit of data, and when it is switched off, the bit of data is released.

The 7164L25DB has two ports, each of which can be accessed independently. To read the data from one port, the device performs a read operation by issuing an address command. This address command enables the device to access the memory array, and then reads the data stored at the address. The device also supports a write operation, which is used to store data in the memory array. During a write operation, the device issues an address command, specifies the data to be written, and then writes the data to the memory array.

The 7164L25DB is a versatile device with a wide range of applications. Its low power-consumption and fast access time make it an ideal choice for embedded systems, SoC designs, and real-time systems. In addition, its two-port architecture allows for simultaneous data access by two devices, making it highly suitable for telecommunications, industrial and medical systems.

The specific data is subject to PDF, and the above content is for reference

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