7164L70TDB

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	64Kb (8K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-55°C ~ 125°C (TA)
Mounting Type:	Through Hole
Package / Case:	28-CDIP (0.300", 7.62mm)
Supplier Device Package:	28-CDIP

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Application Field of7164L70TDB

7164L70TDB is a DDR4-SDRAM, a type of high-speed random access memory. It is widely used in consumer electronics, particularly in personal computers, laptops, and other digital devices. Compared to previous memory types such as DDR3, DDR4 is twice as fast as the latter while still using the same amount of energy.The 7164L70TDB is a component of a system on chip (SoC), providing an ideal solution for memory-intensive applications such as gaming, virtual reality (VR), and deep learning. It is also used in embedded systems and high-performance data analytics. Due to its high data rate, the 7164L70TDB helps reduce system latency, providing high throughput and performance.

Working Principle of 7164L70TDB

The 7164L70TDB works by deploying a Double Data Rate (DDR) type system. This system allows the data to be written in two different clock cycles. In DDR4 SDRAM, the data is written or read in the following sequence: the data is first read or written onto the address set by the device, then the data is sent out or written onto the new address. The byte lanes are used to send and receive data.The 7164L70TDB utilizes a register Model to store data. It consists of a controller and storage, where the controller stores the address and data, while the storage holds the data. The address is set by the controller, which then sends data to the storage. The data is then retrieved from the storage and sent to the device.When the data is sent to the device, the 7164L70TDB utilizes a burst mode to enhance the data transfer rate. This mode is used by the device to transfer data at a continuous rate by sending multiple requests simultaneously. The burst mode helps reduce the time taken to retrieve data from the memory.To ensure data security, the 7164L70TDB also employs an error correction code (ECC) mechanism. This mechanism helps in detecting and correcting errors during the data transfer process. The ECC mechanism also helps to seek out data which is corrupted, so that a new data can be written in its place.

Conclusion

In conclusion, the 7164L70TDB is a high-speed random access memory, used in embedded systems and data-intensive applications. It uses a DDR type system and a Register Model to store data and a burst mode to enhance data transfer rate. Additionally, it utilizes an error correction code (ECC) mechanism to ensure data security.

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