7164L45DB

Memory

The 7164L45DB is an advanced memory product designed for a wide range of applications. It has been designed to offer high performance, reliability and flexibility and is suitable for high-speed storage applications. The 7164L45DB is manufactured by Infineon Technologies, a leading provider of semiconductors and microprocessors.

Application

The 7164L45DB is used in a wide variety of applications including consumer electronics, industrial and military applications, automotive systems, and other memory intensive applications. The device offers a high-speed, energy efficient, low-power alternative to conventional DRAM and SRAM memories.

Features

The 7164L45DB is a high-performance memory device that provides up to 533 MHz data rate, low latency, high temperature performance and advanced error correction mechanisms. The device utilizes an embedded system-level cache design and multiple external buses to provide high-speed access to the memory. It also provides robust ECC and on-board scan features to ensure reliability and data integrity.

Working Principle

The 7164L45DB utilizes a split architecture to access data from the memory. The memory cells are divided into two sections, one for data storage and the other for address mapping. The data is accessed sequentially via an address bus, which transmits addresses to the memory cells. The memory controller receives the appropriate addresses and reads the data from the corresponding storage location. The ECC provides additional data integrity by correcting errors.

The 7164L45DB is an advanced memory device that offers high performance, reliability, and flexibility. It is suitable for high-speed storage applications such as consumer electronics, military applications, and automotive systems. The device utilizes a split architecture to access data from the memory and provides robust ECC and on-board scan features to ensure reliability and data integrity.