7164S85DB Allicdata Electronics
Allicdata Part #:

7164S85DB-ND

Manufacturer Part#:

7164S85DB

Price: $ 12.70
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 64K PARALLEL 28CERDIP
More Detail: SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parall...
DataSheet: 7164S85DB datasheet7164S85DB Datasheet/PDF
Quantity: 1000
169 +: $ 11.55050
Stock 1000Can Ship Immediately
$ 12.7
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip
Description

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As a type of memory, 7164S85DB has its special application field and working principle. It is a 64Kby 8bits high-speed CMOS static RAM with random access memory (RAM) which is specially designed for battery-backed, low noise and low power operation. Its features make it ideal for a wide range of applications, such as datalogging, embedded signal processing, and computer systems.

7164S85DB memory provides medium access speed (10ns), low active power consumption (100 mA max. @ 5V, commercial grade), and excellent power dissipation (5V @ 150mA max. VCC, high temperature grade) with wide supply voltage range (3V to 6V). This memory also has an extended temperature range (usually -40°C to +85°C) and lower off chip power consumption (2µA standby max).

The working principle of 7164S85DB is based on a complementary metal-oxide-semiconductor (CMOS) following the two-transistor Cell Principle. Each of the two-transistor CMOS cells forms a bit of a memory and it has two main operations: writing the data and reading the data. To read the data from the memory, the memory address is sent to the Data Access Chip (DAC) in order to identify the correct location, and then the cells in the memory will be activated. The data which was stored in the memory cells will be readable by the data output line. To write data, the data will be written to the memory and stored in the memory by the data write line. The Write Enable (WE) signal will tell the memory when to store the data into the memory.

7164S85DB memory is suitable for applications that require low power and low cost. As mentioned above, its wide voltage range, extended temperature range, low noise, and low power make it suitable for portable and enterprise applications. It also offers excellent stability, low power dissipation, fast access time, and reliable non-volatile memory.

In conclusion, 7164S85DB memory is an ideal solution for a wide range of applications such as datalogging, embedded signal processing and computer systems. It has many features that make it suitable for a variety of applications, such as low power consumption, fast access time, wide voltage range, extended temperature range, low noise, and low cost. As a result, 7164S85DB is the preferred choice for designers looking for the optimal solution.

The specific data is subject to PDF, and the above content is for reference

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