71V416L12YGI Allicdata Electronics
Allicdata Part #:

71V416L12YGI-ND

Manufacturer Part#:

71V416L12YGI

Price: $ 3.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: 71V416L12YGI datasheet71V416L12YGI Datasheet/PDF
Quantity: 1000
256 +: $ 3.34090
Stock 1000Can Ship Immediately
$ 3.68
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V416
Description

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The 71V416L12YGI is a large-capacity, low-power Static Random Access Memory (SRAM) device. It is widely used in many applications including the fields of consumer, industrial, medical, automotive, and embedded systems that require large-capacity data storage and high-speed data access. This SRAM provides a cost-effective solution for applications that need to store large amounts of information reliably and quickly.

The 71V416L12YGI is built on a high-performance, 2-port asynchronous SRAM architecture. The device has an integrated array of 4,194,304 words of 8 bits each arranged in a 2K by 2K matrix. It features single cycle access times as fast as 15ns. It runs on a single 2.5V supply and consumes only 18mA of active current. The device is also designed for fast power-up and supports multiple operating modes for different system requirements.

The 71V416L12YGI is well suited for use in a variety of applications. These include digital image storage, audio and video buffering, digital clocks and watches, data communications, and printer buffering among others. It is also used in systems that require large and reliable memory arrays, such as digital signal processing (DSP) systems, field programmable gate arrays (FPGAs), digital signal processors (DSPs), and other embedded microprocessors.

The 71V416L12YGI\'s working principles are based on the principles of SRAM technology. In order to read data from the device, the address of the data is stored in the address register and the appropriate command is issued to the SRAM. When the command is received, the data stored in the memory location corresponding to the address is accessed and placed on the data bus. Similarly, to write to the device, the address of the destination location is stored in the address register and the appropriate command is issued along with the data to be written. Upon receiving the command and data, the data is then stored in the addressed memory location.

Overall, the 71V416L12YGI is an ideal solution for systems that require large and reliable data storage with fast access times. The device is capable of supporting multiple operating modes and runs on a single 2.5V supply. It is well suited for applications that require high-performance digital storage such as those found in automotive, industrial, and medical systems.

The specific data is subject to PDF, and the above content is for reference

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