71V416S10PHGI Allicdata Electronics
Allicdata Part #:

800-2135-ND

Manufacturer Part#:

71V416S10PHGI

Price: $ 4.63
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: 71V416S10PHGI datasheet71V416S10PHGI Datasheet/PDF
Quantity: 2120
1 +: $ 4.20210
10 +: $ 3.83733
25 +: $ 3.76438
50 +: $ 3.73867
100 +: $ 3.35381
250 +: $ 3.34092
500 +: $ 3.13237
1000 +: $ 2.99908
Stock 2120Can Ship Immediately
$ 4.63
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V416
Description

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Introduction

71V416S10PHGI is an advanced memory device that was developed and introduced by Byosoft Corporation in 2001. The device is capable of storing up to 64 megabytes of memory and is targeted for use in general-purpose applications such as embedded systems and consumer electronics. The device is part of Byosoft\'s extensive family of Memory products and has been designed to meet a huge range of application requirements.

Application Field

71V416S10PHGI is a versatile memory device with a wide range of applications. The device is ideally suited for use in embedded systems due to its small size and low power consumption. It is capable of supporting various operating systems including Windows, Linux, Mac OS and DOS. Additionally, the device can be used for various applications such as consumer electronics, robotics, toys, gaming, embedded applications, industrial automation, process control and medical devices.

Working Principle

The working principle of the 71V416S10PHGI is fairly simple and straightforward. The device is a DRAM based memory device that is composed of a series of memory cells. Each memory cell is capable of storing a maximum of 8 bits of information. When a user wishes to save information in the device, they must provide the appropriate data and address signals which will be used to store the data in the relevant locations on the device.In order to retrieve information from the memory device, the user must again provide the appropriate address signals which will cause the data stored at that address to be read from the device. The information will then be retrieved and can be processed further by the device.

Summary

71V416S10PHGI is an advanced memory device developed by Byosoft Corporation that is primarily aimed at general-purpose applications such as embedded systems and consumer electronics. The device is capable of storing up to 64 megabytes of memory and has been designed to meet a variety of application requirements. The device is a DRAM based memory device which is composed of a series of memory cells, each of which is capable of storing a maximum of 8 bits of information. The device works by the user providing appropriate data and address signals which are then used to store and retrieve data from the device.

The specific data is subject to PDF, and the above content is for reference

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