71V416S12YG8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	12ns
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:	44-SOJ
Base Part Number:	IDT71V416

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Memory -- 71V416S12YG8 Application Field and Working Principle

Memory is an important part of almost any electronic system involving data processing. In modern electronic systems, memory is used in many forms, ranging from small amounts of RAM to large blocks of ROM. The 71V416S12YG8 is a common form of memory that is used in a wide variety of applications. This article will discuss the application field and working principle of the 71V416S12YG8.

Application Field

The 71V416S12YG8 is a type of synchronous static RAM (SSRAM). It is a high speed, low power memory IC which uses a 4-bit multiplexed address and data bus. It is used primarily in processor-based systems that require low power, non-volatile memory. Examples of these applications include embedded systems, automotive systems, multimedia systems, and robotics.

Working Principle

The 71V416S12YG8 is a 16Kx16 SSRAM, which means it has 16,384 memory locations with 16 bit of data stored in each location. The chip can support both synchronous and asynchronous operation. In synchronous mode, the memory reads and writes data in sync with the clock signal provided by the system. This allows for higher performance since the data can be read or written in a single clock cycle. In asynchronous mode, the chip is not synchronized with the clock signal and instead uses asynchronous read and write strobes from the system to access the memory.

Features and Benefits

The 71V416S12YG8 offers several features and benefits that make it ideal for certain applications. It has a single 5 V supply voltage, which makes it compatible with a wide variety of systems. It also has a guaranteed access time of 60 ns, which is fast enough for many applications. The chip also features advanced power-down modes which allow for low power consumption when the system is idle. Finally, the SSRAM has built-in error detection and correction, which helps to keep data integrity in the event of a power failure.

Conclusion

The 71V416S12YG8 is a versatile and reliable type of memory that can be used in a wide variety of applications. It offers several features and benefits, including a fast access time, low power consumption, and error detection and correction. These features make the 71V416S12YG8 an ideal choice for many processor-based systems that require non-volatile memory.

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