71V424S12PHGI8 Allicdata Electronics
Allicdata Part #:

71V424S12PHGI8-ND

Manufacturer Part#:

71V424S12PHGI8

Price: $ 3.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: 71V424S12PHGI8 datasheet71V424S12PHGI8 Datasheet/PDF
Quantity: 1000
1500 +: $ 3.18363
Stock 1000Can Ship Immediately
$ 3.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V424
Description

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Memory is an essential component of any digital system. Without a reliable and efficient memory solution, the entire digital system may not function properly. The 71V424S12PHGI8 is one such memory solution that offers reliable performance, high speed, and flexibility. In this article, we will discuss the application field and working principle of the 71V424S12PHGI8.

The 71V424S12PHGI8 is a 8-bit SRAM (static random access memory) device. It is ideal for applications needing high speed and low power memory solutions, such as embedded systems and motherboards. This SRAM chip has a memory capacity of 4 kilobytes and a clock cycle time of 40 ns. It also offers a data access time of 150 ns, which makes it an ideal choice for high-performance designs.

The 71V424S12PHGI8 provides the following features: address multiplexing, write cycle time of 8 ms and data retention of 10 years. Address multiplexing allows the device to function with minimal power consumption. The write cycle time of 8 ms indicates that the device is capable of frequent data updates, which allows the system to respond quickly in changing environments. The data retention of 10 years means that the data stored in the device will remain intact even after power is turned off.

The 71V424S12PHGI8 also allows for read-modify-write operations. This feature is useful in applications where data needs to be updated in multiple places. This can save time and memory resources as the device only needs to update one area of memory instead of multiple separate locations.

The 71V424S12PHGI8 operates on a static addressing scheme. In static addressing, the address of the data stored in the SRAM chip is known in advance and can be accessed by reading the address lines. This type of addressing allows the device to access memory quicker than dynamic addressing schemes since the address doesn\'t need to be specified ahead of time.

The 71V424S12PHGI8 also features a built-in write protection circuit. This circuit ensures that the data stored in the device is not accidentally overwritten. If the write protection circuit is enabled, only authorized access to the data is allowed. This protection circuit is especially useful in industrial control systems and automotive applications.

The 71V424S12PHGI8 uses an asynchronous access mechanism to read and write data from the device. The asynchronous access method allows the device to operate without an external clock and eliminates the need for synchronization between the device and the system. This makes the device more flexible and easier to configure for different applications.

Overall, the 71V424S12PHGI8 is an ideal choice for applications needing reliable, high-speed, low-power memory solutions. The device offers a wide range of features such as multiplexed addressing, read-modify-write operations, static addressing, and a built-in write protection circuit. With its advanced performance and flexibility, the 71V424S12PHGI8 is an excellent choice for any digital system.

The specific data is subject to PDF, and the above content is for reference

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