71V424S12PHG Allicdata Electronics
Allicdata Part #:

800-3624-5-ND

Manufacturer Part#:

71V424S12PHG

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: 71V424S12PHG datasheet71V424S12PHG Datasheet/PDF
Quantity: 51
1 +: $ 2.56000
10 +: $ 2.48320
100 +: $ 2.43200
1000 +: $ 2.38080
10000 +: $ 2.30400
Stock 51Can Ship Immediately
$ 2.56
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V424
Description

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Memory - 71V424S12PHG application field and working principle

As an 8 Megabit (1M x 8 Piece) static RAM, 71V424S12PHG are fundamentally used as a nonvolatile storage device, which provides both random and serial access of stored information in the form of bits (0’s or 1’s). It is designed to address up to one million memory locations, but only uses eight chips for a total of eight megabits (1 megabyte) of storage; this is due to the complexity and cost of making a 1 million bit memory chip. The 71V424S12PHG is commonly used on a variety of products, as it provides a reliable way to store data without the need to worry about power losses or data corruptions. It is often used in computers, cell phones, gaming consoles, and other electronics.

The 71V424S12PHG memory comes in both single-chip (8 Megabit) and dual-chip (16 Megabit) configurations and is available in various speeds ranging from 125MHz to 300MHz. Each RAM chip is constructed from a collection of individual cells, which are then connected together to make one memory cell. Each cell is roughly 4kb in size, and provides a total of 8Mb (1x8M) of storage. The memory cell consists of a row and a column (sometimes referred to as \'bit lines\' and \'word lines\' respectively) that intersect each other and form a grid of transistors.

In order for the RAM to read, write or erase the data, the appropriate set of transistors (the row and column) must be activated using special control signals. When a row is selected, the associated data (0 or 1) on the column will be read and then sent to the output of the RAM. If the RAM needs to write data, the appropriate row is selected and the data is written onto the column. If the data needs to be erased, the row and the column must both be selected and erased at the same time.

In order to ensure data security, the 71V424S12PHG also comes with an onboard error detection and correction circuit. This circuit is used to detect any errors in the stored data, and then it will either correct the data or alert the user of the problem. This ensures that any data stored in the RAM is always up to date and reliable.

71V424S12PHG memory is an extremely reliable and cost-effective solution for many applications that require large amounts of data storage, such as gaming consoles, portable devices, and computers. By providing a steady and reliable source of data storage and error detection, the 71V424S12PHG memory can help keep your data safe and secure.

The specific data is subject to PDF, and the above content is for reference

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