74060H Allicdata Electronics
Allicdata Part #:

74060H-ND

Manufacturer Part#:

74060H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: 74060H datasheet74060H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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The 74060H is a high-frequency bipolar transistor capable of handling up to 200 watt peak power. It is designed for use in high-fidelity audio and RF applications. The 74060H is a double-diffused, NPN silicon transistor that works in the silicon oxide-oxide (SiO2) mode. The 74060H has minimal parasitic capacitance, and has been designed to minimize any deterioration in signal linearity due to frequency-dependent stored carriers. With its low noise level, the 74060H is suitable for use in audio amplifiers, especially those requiring low distortion.

The 74060H utilizes an epitaxial chip mounting on an aluminum nitride or copper heat spreader. This method provides excellent heat dissipation and enables a higher power dissipation level than conventional “leaded” transistors. The device also includes an internal noise coupling circuit, further reducing noise and improving linearity. The 74060H has a variety of package configurations, including through-hole, surface mount, and coaxial.

The 74060H is designed for use in a variety of RF applications. It is well-suited for amplifying radio frequency signals over a wide range of frequencies, including cellular, digital radio, and wideband communication systems. The device is also ideally suited for use in high frequency, narrow-band amplifiers, such as those used in satellite broadcasting systems. The 74060H is effective in high speed digital data links, such as those used in local area networks (LANs). The device can also function as an amplifier in microwave ovens, telephone systems, and other high frequency applications.

The 74060H works by amplifying a signal or power level. The device uses an internal power gain stage, which is called a common-base configuration. This type of stage is capable of providing high current gains in the range of 20 to 200, at a voltage of up to 30 volts. The 74060H has a maximum power output of 200 watts peak, with a frequency range of 10 MHz to 1 GHz, and an operating voltage of 12 volts. The device also has an avalanche energy rating of up to 1.5 volts.

The 74060H is a versatile transistor, capable of handling high power levels and amplifying low voltage signals. It is an ideal choice for a variety of RF applications. The device is designed to provide excellent heat dissipation and minimal noise levels, so it is ideal for use in audio amplifiers, radio frequency systems, and high-speed digital data links. Furthermore, the 74060H is available in a variety of package configurations, allowing for easy integration into existing designs. With its robust performance, the 74060H is an indispensable tool for any RF engineer.

The specific data is subject to PDF, and the above content is for reference

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