74ACT11245DWR

Series:	74ACT
Packaging:	Tape & Reel (TR)
Part Status:	Active
Logic Type:	Transceiver, Non-Inverting
Number of Elements:	1
Number of Bits per Element:	8
Input Type:	--
Output Type:	3-State
Current - Output High, Low:	24mA, 24mA
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	24-SOIC
Base Part Number:	74ACT11245

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The 74ACT11245DWR is a Hex Non-Inverting Buffer/ Driver based on the kind of high speed silicon-gate CMOS processes specifically designed for high speed operations. This device is of the Field Effect Transistor (FET) technology, which provides the user with a very low power logic family. The 74ACT11245DWR consist of six non-inverting buffers and drivers with active high outputs connected to a common stage. This device is is featured by low-power consumption and high-speed operation over the military temperature range.
The application field of the 74ACT11245DWR is wide and diverse. It is suitable for buffering data and address buses, and for driving the address or data lines in memories. It can also be used in synchronous bus systems or where used as peripheral device selection and interface logic. Furthermore, it is used in LCD drivers and controllers, ATE logic systems and fast switching peripheral devices.
The working principle of 74ACT11245DWR is based on a Hex Non-Inverting Buffer/Driver with an active high output. It features two inputs, one for data (A), and one for the active-low output enable (OE), as well as six outputs (Y).
The data input (A) is connected to all six outputs (Y). The inverse of the output enable (OE) is used to enable the buffer and output active (high) level. If the output enable (OE) is low the six outputs (Y) will be in the active level. If OE is high, then the outputs (Y) will be in the inactive (high-impedance) state.
The device characteristics of the 74ACT11245DWR also differs in terms of speed, static and dynamic power dissipation, temperature range and operating voltage. The speed of this device is characterized in terms of propagation delay, clock-to-output delay, enable-to-output delay and output enable disable time.
The static power dissipation, or the power consumed when device is in the inactive state, is estimated to be no more than 10 µW during normal operation, whereas the dynamic power dissipation, or the power consumed when device is in the active state, is approximately 20 µW. This low power consumption contributes as one of the main advantages of this device compared to that of other CMOS devices.
Furthermore, the device incorporates an output drive capability which depends on the temperature range of the device and the type of application that it is used in. In most cases, the device will operate correctly from an operating voltage from 4.5V to 5.5V. The normal temperature range should be kept in the -55° C to 125° C range, as the device operates best within this temperature range.
Finally, the 74ACT11245DWR device is designed to withstand various levels of electrical overstress and electrostatic discharge (ESD) up to the Class 3B level, or 3 kilovolts. The device is then carefully tested and evaluated. In order to meet the quality and reliability requirements, a well-defined screening program is applied on all tested devices to ensure that the product meets the highest standards of quality and reliability.
In conclusion, the 74ACT11245DWR is a high-speed non-inverting buffer/driver capable of operating at temperatures ranging from -55° C to 125° C, with low static and dynamic power dissipation. It features two inputs, one for data and one for output enable and a total of six outputs. It is used in various applications such as buffering data and address buses, driving memory address and data lines, synchronous buses, LCD drivers and controllers, ATE logic systems, fast switching peripheral devices, etc. This device is then tested and evaluated to meet the highest standards of quality and reliability.

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