824521101 Circuit Protection

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TVS diodes are a crucial component of any electrical system, providing protection for both equipment and circuitry from dangerous spikes and surges. An 824521-101 is a specially engineered, unidirectional, low capacitance transient voltage suppression (TVS) diode that is designed to protect against damaging lightning and voltage transient events. This device is constructed using a silicon avalanche diode structure featuring a built-in junction-gate FET, an SCR, and a low capacitance, low-level, low-thermal-runaway Zener diode.

The 824521101 is uniquely designed for the purpose of providing transient voltage protection. When the TVS is exposed to an electromagnetic wave, its structure utilizes a P-N junction to enable an avalanche breakdown effect. This helps to counteract any damages or overvoltage conditions that can arise due to power surges from both the external and internal sources. To add to this, the built-in junction-gate FET (JGFET) allows for an increased breakdown voltage and minimal off-state leakage current.

The SCR component of the 824521101 also serves an important purpose when it comes to transient suppression. This component is able to enable a low-impedance condition when energized. This helps protect extra-sensitive equipment from the harmful results of a power surge. In addition, the SCR can also reduce any adverse effects caused by ringing or overshoot between AC power lines.

Finally, the 824521101 device is equipped with a low capacitance, low-level, low-thermal-runaway Zener diode. This component works to reduce the peak level of the transient event while protecting against voltage levels up to 5.5V. In addition, the Zener diode also helps to protect the TVS from thermal runaway. This is critical in protecting the TVS from accidental exposure to high-energy transients that could damage the television and other equipment.

In conclusion, the 824521101 TVS-Diode is a highly engineered and specialized device designed to provide robust transient voltage protection. Its unique construction consisting of a P-N junction, a built-in junction-gate FET, an SCR, and a low-level, low-thermal-runaway Zener diode allows it to protect equipment and circuitry from damaging voltage transient events.

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