893D476X9016E2TE3

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Tantalum capacitors are widely used in many applications due to their high energy density and low leakage. The 893D476X9016E2TE3 is one of the most popular models of tantalum capacitors and is used in many applications. This article will discuss the application field and working principle of the 893D476X9016E2TE3 tantalum capacitor.

The 893D476X9016E2TE3 is a type of surface-mount, low-impedance chip capacitor, suitable for use in high-reliability electronic equipment. This tantalum capacitor features a capacitance of 47 μF, a voltage rating of 16 VDC, and an ESR of 3 Ω. It is highly resistant to mechanical shock and vibration, and is also highly resistant to moisture, meaning it can be used in harsh environments. This capacitor is suitable for use in high-frequency circuits, DC-DC converters, digital logic circuits, and other high-reliability applications.

The 893D476X9016E2TE3 capacitor utilizes a tantalum pentoxide layer dielectric. This dielectric is where the capacitance of the capacitor is derived from. The dielectric is formed from a layer of oxide formed by the reaction between the tantalum powder and the oxygen in the air. The tantalum pentoxide layer provides the 893D476X9016E2TE3 capacitor with a high dielectric constant, resulting in superior capacitance and voltage ratings compared to other ceramic, film, and aluminum electrolytic capacitors.

The 893D476X9016E2TE3 capacitor has two distinct operating principles. The first principle is based on the electrochemical reaction between the anode and the cathode of the capacitor. When an electrical current is applied across the anode and the cathode of the capacitor, ions from the anode react with the cathode, forming an electrochemical cells. This electrochemical reaction is used to store electrical energy in the capacitor, and can be released when the electrical current is removed. In addition, the electrochemical reaction also has the effect of producing a low dissipation factor, which results in a low ESR rating.

The second operating principle is based on the dielectric polarization effect of the tantalum pentoxide layer. When an electrical current is applied across the capacitor, the molecules of the tantalum pentoxide layer form dipoles, each of which will reorient itself in the direction of the electrical field. This phenomenon results in a dielectric polarization that increases the capacitance of the capacitor, thus allowing for a higher voltage rating and a lower ESR.

In conclusion, the 893D476X9016E2TE3 is a popular type of tantalum capacitor that has many applications in the field of high-reliability electronics. Its low-impedance design allows it to be used in high-frequency circuits, DC-DC converters, digital logic circuits, and other applications. The 893D476X9016E2TE3 utilizes both an electrochemical reaction and dielectric polarization to store electrical energy and increase its capacitance. This results in superior capacitance and voltage ratings compared to other ceramic, film, and aluminum electrolytic capacitors.

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