Allicdata Part #: | 8ETL06S-ND |
Manufacturer Part#: |
8ETL06S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A D2PAK |
More Detail: | Diode Standard 600V 8A Surface Mount D2PAK |
DataSheet: | 8ETL06S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FRED Pt® |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 8ETL06 |
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Introduction
The 8ETL06S is a P-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) based rectifier. Commonly referred to as a Schottky diode, this device behaves similar to a single-phase silicon diode, yet can handle higher power levels and higher peak currents. Its low forward voltage drop and its ability to work on both direct and alternating current make it a very useful component for a variety of applications.
Application Field
The 8ETL06S can be used in a variety of voltage control and motor control applications. It is often used in power supply designs, where it can be used to regulate the voltage of the power system by varying the conductance from the supply line to the load. In motor control applications, it is used to control the current that is sent to a motor, allowing users to efficiently control the speed and torque of the motor.The 8ETL06S can also be used in power switching or switching applications, such as transistors or solid state relays. In these applications, the 8ETL06S can be used to control the switching of higher power levels, as well as providing protection against short circuits or unexpected current spikes. The low forward voltage drop makes it an ideal component for use in vehicles, where the voltage supply can vary from 12-24V.
Working Principle
The 8ETL06S is a voltage-controlled device. When a voltage is applied to the gate of the device, the P-type MOSFET region of the device is turned on, which allows current to pass through it in the forward direction. When no voltage is applied, the device is turned off, blocking any current from passing through. The voltage applied to the gate can be varied depending on the desired effect.The 8ETL06S consists of two internal regions: a source region and a drain region. When a voltage is applied to the gate, both regions electrically connect and allow current to pass from the source to the drain. The resulting electric field between the two regions is responsible for the blocking behavior of the device until the voltage is applied. This allows for the precise control of current through the device.Unlike traditional silicon-based rectifiers, the 8ETL06S can handle high power levels and peak currents. Its low forward voltage drop allows it to operate efficiently in low voltage supplies, as well as providing protection against short circuits and current spikes. The 8ETL06S is also a great choice for applications that require switching large amounts of current, such as motor control or power switching.
Conclusion
The 8ETL06S is a P-type metal-oxide-semiconductor FET-based rectifier. It is a voltage-controlled device, which can handle higher power levels and peak currents while providing a low forward voltage drop. The 8ETL06S is commonly used in power supply designs and motor control applications, as well as power switching or switching applications. Its precise current control and protection against short circuits and overcurrent make it a great choice for applications that require high levels of power control and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-8ETL06-M3 | Vishay Semic... | 0.66 $ | 1000 | DIODE FRED 600V 8A TO220A... |
VS-8ETL06PBF | Vishay Semic... | 1.06 $ | 896 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06SPBF | Vishay Semic... | 1.2 $ | 951 | DIODE GEN PURP 600V 8A D2... |
VS-8ETL06FP-N3 | Vishay Semic... | 1.32 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06STRLPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06STRRPBF | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETL06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETL06-1 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
8ETL06S | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A D2... |
8ETL06FP | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06FPPBF | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-8ETL06-1PBF | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
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