8EWF04STRR

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The 8EWF04STRR is a single diode rectifier fabricated in a plastic package using the Schottky Barrier principle, with guard ring for enhanced reliability. It features an ultra-low power and voltage drop with a compact size and wide package range and is most commonly used in the battery charging and reversing circuit, solid-state relays, switching power supplies and more manageable power supplies, and other kinds of applications.

The 8EWF04STRR has a blocking voltage range of 20V to 100V with a forward current of 0.04A. Its reverse current is 5μA, maximum at VR of 5V, and its average forward current is 0.04A. It has a surge forward current is 0.46A, max. and a reverse stand-off voltage of 1.2V. Unit breakdown voltage is IR (1mA) of 4V max and a VF (IF 0.04A) of 0.46 V max. It has a total capacitance of 1.3pF and a total power dissipation of 0.2W.

The working principle of 8EWF04STRR rectifier diode is based on Schottky Barrier Diode (SBD) and the associated metal-semiconductor junction. This rectifier diode is composed of two metal contacts that connect to two different semiconductor domains. The P-type semiconductor material connects to the anode and the N-type semiconductor connects to the cathode. The metal-semiconductor junction affects the flow of current since the interface between metal and semiconductor has a lower barrier height than a typical rectifier diode. The current flow is then modulated by the capacitive and resistance properties dependent on the threshold voltage when the diode is under reverse bias.

The 8EWF04STRR diode is used in a variety of applications. It is used in the battery charging and reversing circuit, switching power supplies, solid-state relays, and other manageable power supplies. It is also used in LED lighting, automotive systems, audio speaker systems, circuit protection, and other high-frequency power conversion and control applications. The low power and voltage drop that 8EWF04STRR diode has makes it ideal for use in the aforementioned areas. Additionally, the advanced guard ring technology used in the 8EWF04STRR diode increases its reliability, enabling it to perform in harsher environmental conditions than standard rectifier diodes.

The 8EWF04STRR is a single diode that is constructed with a plastic package and is based on a Schottky barrier principle. Thanks to its ultra-low power and voltage drop and its wide package range, 8EWF04STRR diode can be used in various applications ranging from LED lighting and battery charging to switching power supplies and other manageable power supplies. Additionally, its advanced guard ring technology provides a high level of reliability and makes it ideal for use in high-frequency power conversion and control applications.

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