93AA86A-I/SN Allicdata Electronics
Allicdata Part #:

93AA86A-I/SN-ND

Manufacturer Part#:

93AA86A-I/SN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SPI 3MHZ 8SOIC
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 3MHz 8-SOIC
DataSheet: 93AA86A-I/SN datasheet93AA86A-I/SN Datasheet/PDF
Quantity: 62
Stock 62Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 93AA86A
Description

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The 93AA86A-I/SN is a type of dynamic random access memory (DRAM). It is a non-volatile memory technology, meaning that data can be stored without being electrically powered, which makes it more reliable than most other types of memory. It is typically used in computers and other systems that need to store large amounts of data in a small, efficient package. It has a higher bit density than most other kinds of DRAMs, meaning it can store more data in a smaller space.

The 93AA86A-I/SN can be used in a variety of applications. It is often found in personal computers, servers, and workstations, as well as in embedded systems, such as routers, switches, and other communication or industrial equipment. It can also be used in gaming consoles and in mobile devices, such as smartphones and tablets. It is also used in a variety of industrial applications, such as medical equipment and automotive systems.

The 93AA86A-I/SN uses a type of DRAM technology that is different from traditional DRAM. Traditional DRAM works by having a cell for each bit of information. The 93AA86A-I/SN doubles the amount of data that can be stored by combining the cells of two memory locations into one, meaning it can store twice as much data in the same amount of space. This type of DRAM technology is known as “dual-cell DRAM.”

The working principle of the 93AA86A-I/SN is based on the concept of “charge-pump” technology. It uses an electric circuit to move a constant stream of electric charges around a capacitor. This constant stream of charges maintains the charge state of the cell and allows the device to store data. This data is accessed in a cycle known as a read-modify-write cycle (RMW).

The 93AA86A-I/SN has several advantages over traditional DRAM. It has a high bit density, meaning it can store more data in a smaller space. It is also faster than traditional DRAM, which makes it better for applications that require powerful storage. In addition, it has increased reliability and endurance, meaning it can store more data for longer periods of time.

The 93AA86A-I/SN is a powerful type of DRAM that can be used in a variety of different applications. Its high bit density and reliability make it an ideal choice for memory applications that require large amounts of data to be stored. Its “charge-pump” technology allows it to access data quickly and efficiently and its read-modify-write cycle makes it reliable for data storage over long periods of time.

The specific data is subject to PDF, and the above content is for reference

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