93C46B/W15K Allicdata Electronics
Allicdata Part #:

93C46B/W15K-ND

Manufacturer Part#:

93C46B/W15K

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 1K SPI 2MHZ WAFER
More Detail: EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz Die
DataSheet: 93C46B/W15K datasheet93C46B/W15K Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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93C46B/W15K Application Field and Working Principle

Memory

93C46B/W15K is a serial electrically erasable programmable memory (EEPROM) device which is widely used in many applications. This type of the EEPROM has an 8-pin package and can store up to 1024 bits of data. It is ideal for storing configuration settings and other non-volatile data that does not often require changes.

The main application of 93C46B/W15K EEPROM is in embedded systems, where it serves as a non-volatile memory that can be programmed and erased electrically without the need of special external programming devices. It is often used to store calibration data or to configure microcontroller-based systems. It is also used in the manufacture of IOT (Internet of Things) products such as electrical appliances or security cameras.

The working principle of 93C46B/W15K EEPROM is based on a floating gate structure. This structure is divided into two parts: the primary and the secondary gates. The primary gate is connected to the drain and gate terminals of the device and functions as a voltage-controlled device. The secondary gate is connected to the source terminal and it acts as a non-volatile memory element. The operation of the EEPROM is based on the application of voltages to the drain and gate terminals, which modulate the conductivity between the source and drain terminals. Data is stored in the memory element when a voltage is applied to the drain terminal. Additionally, the device has rising-edge sensing and falling-edge sensing capabilities, which allow it to detect transitions between bits.

When programming data into the 93C46B/W15K EEPROM, the device needs to be specially configured. This is done using a programming voltage of 13.5 to 14.0 V, which is then applied to the drain terminal, in combination with a logic ‘’1’’ or logic ‘’0’’ to the gate terminal, depending on the desired bit. To erase the data, the device needs to be connected to a programming voltage of 8.5 to 9.0 V and the data that needs to be erased must be ‘’oned’’. After programming or erasing, a verification read must be performed to ensure that the proper data was written/erased to/from the non-volatile memory.

Overall, 93C46B/W15K EEPROM is an ideal non-volatile memory solution for embedded systems and IOT products. It has a small package size, low power consumption, fast programming and read/write cycles, and supports both program and erase operations. It is very reliable and provides reliable data storage for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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