93C46BT/ST

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (64 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	2ms
Memory Interface:	SPI
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Base Part Number:	93C46B

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Introduction

The 93C46BT/ST is a range of non-volatile static random access memories (SRAM) created by Microchip Technologies with the purpose of providing high speed and low power consumption. The 93C46BT/ST memory devices are regularly used in RFID and automotive applications.

Knowing the 93C46BT/ST

The 93C46BT/ST is a 1 KB non-volatile static RAM that features a continuous write/erase endurance of 10,000 cycles, a data retention period of 10 years and a 3 microamps CMOS standby current. This low power consumption makes it ideal for low-power applications. The 93C46BT/ST has a 16-pin surface mount package, but some packages include power-up and power-down options, allowing the device to remain powered up even after the system is switched off.The device\'s key features include an internal write protection scheme and an internally generated write cycle length between 4 - 12 ms. This protection makes the device especially secure for data storage applications.

Wide Compatibility

The 93C46BT/ST is a universal device compatible with a variety of logic families and microcontrollers. It is available in a wide range of package types, from through-hole to surface mount, making it ideal for applications that require a wide breadth of design parameters. The 93C46BT/ST is widely used in industrial, consumer and automobile applications.

Accessing the 93C46BT/ST

The 93C46BT/ST memory device is accessed through electrical pulses analogical to the ones used for the permanent memory of microcontroller and automotive applications. Its unique address structure allows the user to access different sections of the memory with a single write pulse. The device can be accessed through nine-bit instructions that apply different modes of operation such as write, erase and read instructions. Additionally, the device can also be put in power-down mode, extending its usability within deeply embedded applications with long standby time requirements.

Programming the 93C46BT/ST

The 93C46BT/ST device is programmed by applying the write signals to the address lines. The write cycle is managed internally and requires no external gate signals. The memory device can be directly used as a memory array with no need of using a programmable logic device such as a PROM.The write cycle operation is consolidated in three steps. The write operation is initiated with a write address signal followed by the writing of the data to be stored. This data is maintained in the internal control circuit until the third step which is completed when the write instruction completes its written cycle.

Conclusion

The 93C46BT/ST is a non-volatile static RAM, a very useful memory device for embedded and automotive applications. Its high speed and low power consumption make it perfect for low-power and data storage applications, where it is typically used.The 93C46BT/ST devices can be easily accessed through nine-bit instructions and programmed without the need of an external gate signal, making it an ideal choice for design optimization. The extremely wide compatibility of the 93C46BT/ST makes it even more attractive.

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