93C46C-E/P

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8, 64 x 16)
Clock Frequency:	3MHz
Write Cycle Time - Word, Page:	2ms
Memory Interface:	SPI
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-PDIP
Base Part Number:	93C46C

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93C46C-E/P Memory

93C46C-E/P memory is a type of semiconductor memory which is used in a variety of applications. This type of memory is based on the popular chip-type EEPROM (electrically erasable programmable read-only memory) technology, which allows a user to safely store and access data without the need for a loading or unloading mechanism.The 93C46C-E/P memory is primarily used in industrial and automotive electronics, but can also be found in consumer electronics. In the automotive industry, it is used in engine control systems and other electronic control units for diagnostics, climate control systems, immobilizers, and even sensor data heat-conserving systems. In the consumer electronics world, it can be found in video game systems, digital cameras, and MP3 players. It is also used in military and aerospace systems.The 93C46C-E/P memory differs from other chip-type EEPROMs in that it has a built-in address system. This means that data can be written to individual memory locations, which speeds up the write process, reduces write cycle time and results in increased reliability.The working principle of 93C46C-E/P memory is based on Fowler-Nordheim tunneling. This process involves moving electrons through a barrier between two conductors (in this case, a silicon dioxide layer and the substrate in the chip). The electrons are attracted to the higher voltage side of the tunnel and are forced through the barrier and into the lower voltage side. The tunneling of electrons through the barrier and into the substrate causes the charges to be stored in the dielectric layers. This process can be used to store bits of information as either 0s or 1s in the memory cells.The memory cells in a 93C46C-E/P memory chip are organized into 8-bit word lengths, which allows for a maximum of 256 words. When writing to the memory, the address location, data to be written, and the write command must all be specified. To read data from the memory, the address location and the read command must be specified.The 93C46C-E/P memory has a very fast access time, and can be used in low power and low voltage applications, as well as applications with high temperature and humidity. The 93C46C-E/P memory also provides a very reliable data storage solution for critical data. It is also cost effective and widely available.

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