93C46C-E/SN

Introduction

93C46C-E/SN is a non-volatile, serial and electrically erasable programmable read-only memory integrated circuit. It is a four-wire E2™ serial EEPROM device optimized for low-power operation in end systems. The 93C46C-E/SN offers an unprecedented combination of high density, low power consumption and ultrahigh frequency. The 93C46C-E/SN memory offers 1024 bits of memory, organized as 256 words of 8 bits.

Application Field

93C46C-E/SN are widely used in a variety of electronic systems. The current applications of 93C46C-E/SN memory includes but is not limited to consumer electronics, automotive, industrial, and medical electronics. It is the ideal choice for applications requiring the reliable storage of critical data. In consumer electronics, it is typically used for storage configuration information and other low-density data. It is also used to store programming or setup information in various consumer devices so that this information does not need to be re-entered when a device is powered off and on. In automotive, industrial, and medical electronics, 93C46C-E/SN memory is often used in mission-critical applications, such as monitoring and control systems, where it is important that data are accurately and reliably stored even in harsh environments.

Working Principle

93C46C-E/SN memory can be operated at both low and ultrahigh frequencies. The 93C46C-E/SN data bus signal has five signal classes: Data Input/Output (DIO), Clock Input (CLKIN), Chip Enable (CE#), Write Enable (WE#) and Output Enable (OE#). The 93C46C-E/SN requires either a rising or falling edge to be used during command and data I/O.

DIO is the data bus for both writing data into the memory and reading data from the memory. Data on DIO must be stable at the same time of either a rising or falling edge of the Clock Input (CLKIN) signal. Data on DIO is latched into the I/O shift register on the rising or falling edge of CLKIN.

CE# is the Chip Enable signal (active low). This signal must be driven low to initiate all write and read cycles. When CE# is held low no changes will be made in the device and any operations in progress will halt. When CE# is high all operations in progress terminate and the device goes into standby mode. Additionally, any logic levels present on the DIO pin at the time CE# goes high are ignored.

WE# is the Write Enable signal (active low). It must be driven low to initiate a Write cycle. When WE# is held high the device is placed in standard read cycle mode.

OE# is the Output Enable signal (active low). This signal provides for read cycles and is used to enable the data output on DIO. When OE# is low, data is passed from the memory cell array along the data path and is placed on the I/O pin, hence the output of data is enabled. When OE# is high, the I/O pin changes state to high impedance.

Conclusion

The 93C46C-E/SN are an efficient and versatile non-volatile memory IC which can be used in a variety of applications. Its high density and low power consumption ensures the 93C46C-E/SN memory remains an ideal choice for applications requiring reliable storage of critical data.