93LC86A-E/P Allicdata Electronics
Allicdata Part #:

93LC86A-E/P-ND

Manufacturer Part#:

93LC86A-E/P

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SPI 3MHZ 8DIP
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 3MHz 8-PDIP
DataSheet: 93LC86A-E/P datasheet93LC86A-E/P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Base Part Number: 93LC86A
Description

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The 93LC86A-E/P is a non-volatile Static Random Access Memory (SRAM) product designed and manufactured by Microchip Technology Inc. It is used to store and retrieve data at high speeds. The 93LC86A-E/P is capable of storing up to 256 bits of data on a single chip. The 93LC86A-E/P is a 16 pin device with SOIC or SMT package options. It has an access time of 250ns and a data retention of > 100 years.

The application field of the 93LC86A-E/P are primarily for high-speed processing of large amounts of data in industrial, automotive, communications and instrumentation applications. It is also used in testprobes, medical equipments, controllers and transducers.

The working principle of the 93LC86A-E/P is the same as other SRAM products. In the simplest terms, it stores electrical charges for a brief period of time, typically a few nanoseconds. This charge is stored in an electrical field, which creates a magnetic field. This magnetic field creates an electrical buffer and results in a data storage.

The 93LC86A-E/P SRAM contains an array of memory cells connected to a bus. Each cell is composed of two transistors and two capacitors. A write operation is accomplished by applying an appropriate voltage to the appropriate cell(s) to store a bit of data. A read operation is accomplished by applying an appropriate voltage to the appropriate cell(s) and observing the cell’s output.

To improve the data retention capability of the 93LC86A-E/P, the capacitors are protected from radiation. This is accomplished by using a specialized memory cell design which includes a shielding layer which absorbs the radiation and dissipates it. This shielding layer also dissipates any thermal energy which is created by the read or write operation, which improves the performance of the device.

The 93LC86A-E/P features an auto-write feature which eliminates the need for a write cycle. When a write cycle is not necessary, the write signal is applied to the chip and the data is automatically written to the memory cells. This eliminates the need for a write operation and improves the overall performance of the device.

The 93LC86A-E/P is capable of many operations and can be easily programmed to perform specific functions. The device also offers a great degree of flexibility, allowing the user to create a complete memory solution for a variety of applications. The 93LC86A-E/P is an ideal solution for high speed data processing and storage applications.

The specific data is subject to PDF, and the above content is for reference

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