93LC46CX-I/SN

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The 93LC46CX-I/SN serial Electrically Erasable Programmable Read-Only Memory (EEPROM) is a memory device that can store up to 128 bits of data. It is a 16-pin CMOS device with an 8-bit data bus, making it ideal for applications where data storage and retrieval are required. It is also a popular choice for embedded applications due to its low power consumption and small physical size.

The 93LC46CX-I/SN has a wide range of applications in various fields. In the automotive industry, it is used for storing engine control maps, airbag control and immobilizer systems. In medical and fitness equipment, it can be used to store patient data, medical records and personal fitness tracking data. It is also used in automotive, military and industrial control systems to store configuration information, calibration data and other critical tuning parameters. In consumer electronics, the EEPROM can be used to store user settings and game data. Lastly, in communication and networking equipment, it is used to store firmware, settings and other critical data.

As an EEPROM, the 93LC46CX-I/SN works by storing charge on an array of memory cells. The most common type of memory cell is the floating-gate transistor, which stores charge on a thin oxide layer. To program the EEPROM, voltage is applied to the word-line, which enables the program transistors to write data to the memory cells. To erase the memory cells, a negative voltage is applied to the word-line, which dissipates the charge from the memory cells. To read the data stored in the memory cells, voltage is applied to the bit-line, which generates a current in the memory cells. This current is then amplified and converted into digital data.

In summary, the 93LC46CX-I/SN is a popular choice for embedded applications due to its low power consumption and small physical size. It has a wide range of applications in various industries, including automotive, medical and fitness, industrial, consumer electronics and communications. Working as an EEPROM, it stores charge on an array of memory cells, which can be programmed, erased and read by applying voltage to the word-line and bit-line.

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