93LC56T/SN Allicdata Electronics
Allicdata Part #:

93LC56T/SN-ND

Manufacturer Part#:

93LC56T/SN

Price: $ 0.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 2K SPI 2MHZ 8SOIC
More Detail: EEPROM Memory IC 2Kb (256 x 8, 128 x 16) SPI 2MHz ...
DataSheet: 93LC56T/SN datasheet93LC56T/SN Datasheet/PDF
Quantity: 1000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 93LC56
Description

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  • Introduction

    The 93LC56T/SN is a nonvolatile, electrically erasable and programmable memory that can be used in a variety of applications. This type of memory is often referred to as an EEPROM (electrically erasable programmable read-only memory), and is used in a variety of embedded systems, including microcontrollers, digital signal processors, and network communications systems.

  • Application Fields

    93LC56T/SN is mainly used in a variety of embedded systems, where its nonvolatile, electrically erasable and programmable capabilities are highly beneficial. Many embedded systems, such as microcontrollers, use EEPROMs to store configuration settings and other program data that needs to be preserved even when the system is powered down.

    EEPROMs are also used in digital systems, such as digital signal processors, that rely on nonvolatile memory to store data and settings required to maintain system operation and performance.

    These devices are also popular in network communications systems, often used to store MAC (media access control) addresses for efficient and secure data transmission.

  • Working Principle

    The 93LC56T/SN utilizes a technology known as “floating gate” EEPROM, which allows data to be stored without the need for a constant power source. This is achieved by using a thin gate oxide layer that is sandwiched between two layers of polysilicon. The floating gate is mapped to a MOSFET (metal-oxide-semiconductor field-effect transistor), and when writing data to the device, electrons are injected onto the floating gate, changing the voltage across the gate oxide layer.

    The device can be read by passing current through the MOSFET, and measuring the voltage that is generated across the gate oxide layer. For modifying or erasing data, the voltage applied to the gate oxide layer is reversed, either erasing the electrons from the gate or injecting them. This process is known as “hot electron injection”, and is one of the unique features of the 93LC56T/SN.

  • Conclusion

    The 93LC56T/SN is a versatile memory device that can be used in a variety of applications requiring nonvolatile memory. It utilizes a “floating gate” technology that allows data to be stored without a constant power source, and its “hot electron injection” process enables the device to be programmed, modified, or erased quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference

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