Allicdata Part #: | 98-0247-ND |
Manufacturer Part#: |
98-0247 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC MOSFET DRVR HI/LO SIDE 16SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-SOIC |
DataSheet: | 98-0247 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 3.3 V ~ 20 V |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Current - Peak Output (Source, Sink): | 2A, 2A |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 600V |
Rise / Fall Time (Typ): | 25ns, 17ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOIC |
Base Part Number: | IR2113S |
Description
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PMIC – Gate DriversPower Management Integrated Circuits (PMICs) are used to regulate and distribute power to multiple integrated circuits in a wide variety of applications. PMICs are a set of components and circuits that allow integrated circuits to maintain steady power during different application states. Gate drivers are an important part of PMICs. They provide the signals and voltage levels necessary to switch power circuits on or off in a precise and consistent manner.The 98-0247 is a MOSFET gate driver IC specifically designed to drive both high and low side N-channel MOSFETs with improved response times and very high reliability. The device uses two inputs to control two independent N-channel MOSFETs, making it possible to control four states of both low side and high side power MOSFETs. The four states are: On (High), Off (Low), High Impedance (Hi-Z), and Power Discharge (PD). The Gate Driver output can sink up to 20mA and source up to 3.2mA allowing it to drive power MOSFETs with high switching speed and very low power losses.The 98-0247 has four independent protection circuity to protect against any damage from Electrical Over Stress (EOS): Undervoltage Lockout (UVLO), Output Overvoltage protection (OVP), Reverse Polarity Protection (RPP) and On resistance monitoring (RON). The UVLO monitors the supply voltage and when it drops down below the UVLO threshold, it disables the power outputs preventing the system from entering an undefined or “stuck” state. The OVP prevents output voltage from exceeding the set threshold and thereby protecting the gate driver from any unexpected overvoltage events. The RPP monitors the supply voltage and shuts down the power outputs if the voltage supplies polarity is reversed. Finally, the On resistance Monitoring (RON) feature detects any increase in the on-resistance of the MOSFET and shuts down the power outputs to avoid further damage.The application field of the 98-0247 gate driver is in automotive lighting applications such as LED headlights, fog lights and turn signals. It can also be used in LED backlighting and LED street lighting applications. In automotive applications, it is used to drive high power LEDs and to control the dimming of the lighting system. The driver can also be used in medical applications such as imaging systems, patient monitoring systems and life-support systems. In industrial applications, it can be used to drive high power MOSFETs for motor control, industrial lighting, HVAC and other applications.The working principle of the 98-0247 gate driver is simple and straightforward. It increases and decreases the voltage at the gate of the MOSFETs by controlling the current flowing into and out of the gate, thereby switching the power output of the MOSFETs on and off. The user can control the voltage level at the gate of the MOSFETs by controlling the VGS (Gate to Source) and VDS (Drain to Source) voltage levels. In addition, the driver has onboard protection circuitry which monitors the voltage levels at the gates, preventing any potential damage due to high voltage spikes or undervoltage conditions.The specific data is subject to PDF, and the above content is for reference
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