A1C15S12M3-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - IGBTs - Modules

A1C15S12M3-F is a module consisting of a Infineon 15A IGBT, along with 3 x Infineon F4 Short-Circuit Rated Ultrafast Diodes. The main application for this module is in motor control, including Uninterrupted Power Supply (UPS) Thrystors, power factor correction (PFC) drivers, other DC-to-AC inverters, DC choppers and motor drivers.

The Infineon A1C15S12M3-F IGBT has a maximum collector-emitter voltage of 1200 volts. It is designed to provide the highest rated output power (15A) with the lowest switching losses. It is a high efficiency, low cost device that is suitable for a wide range of applications that require high speed switching and good thermal performance. It also provides very good EMI and ESD protection, making it ideal for use in industrial, automotive and medical applications.

The three F4 ultrafast diodes provide a low forward voltage drop in forward conduction and relatively high reverse breakdown voltage, making them ideal for use in applications such as AC-DC rectification and as high-power suppressors in a circuit. Additionally, their fast switching speed make them suitable for pulse-by-pulse current limitation and in applications that require high speed switching.

The working principle of the A1C15S12M3-F is dependent on the N-Channel IGBT technology. An IGBT is a type of MOSFET with a simple gate structure that makes it ideal for applications that require low switching losses and high current capability. When the base current is applied, the IGBT turns on, allowing current to flow from collector to emitter. The diodes provide additional protection from current surges, providing a low forward voltage. This applies to operation in both directions, providing the best possible thermal performance.

The A1C15S12M3-F provides excellent performance and flexibility for high-power applications. Its high rated collector current and low switching losses provide high efficiency, while its fast switching speed and low forward voltage drop make it suitable for applications that require pulse-by-pulse current limitation. Its EMI and ESD protection also make it ideal for use in a wide range of industrial, automotive and medical applications.

The specific data is subject to PDF, and the above content is for reference