A1C15S12M3 Allicdata Electronics
Allicdata Part #:

497-17736-ND

Manufacturer Part#:

A1C15S12M3

Price: $ 26.70
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT TRENCH 1200V 15A ACEPACK1
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: A1C15S12M3 datasheetA1C15S12M3 Datasheet/PDF
Quantity: 1000
1 +: $ 24.27390
10 +: $ 22.64660
100 +: $ 19.66310
Stock 1000Can Ship Immediately
$ 26.7
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Power - Max: 142.8W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 985pF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ACEPACK™ 1
Description

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The A1C15S12M3 is a form of insulated-gate bipolar transistor (IGBT) module that can be used in a wide range of power electronic applications. As an IGBT module, the A1C15S12M3 can provide a combination of high switching speed and high energy savings, making it a popular choice for several industries. This article will discuss the applications and working principle of the A1C15S12M3.

Applications of A1C15S12M3

The A1C15S12M3 is a highly versatile module, and can be implemented in a wide range of power electronic applications. It is commonly used as an effective power switch in motor control, high-efficiency lighting, electric vehicles, and renewable energy solutions. The A1C15S12M3 IGBT module can also be utilized in switching on and off industrial process lines, uninterruptible power supplies, and grid-tie solutions. This module can deliver an outstanding combination of a low losses, robust short circuit protection, high gate drive capability and current handling capability of up to 15A. Additionally, the A1C15S12M3 allows for cost-effective maintenance and allows for easy integration into existing designs.

IGBT Working Principle

Insulated-gate bipolar transistors, or IGBTs, are semiconductor devices consisting of two differently doped semiconductor regions: an n-type and a p-type. The n-type semiconductor region consists of an emitter and a collector, whereas the p-type region consists of a base and gate. This structure allows for the current to flow between the emitter and the collector when a voltage is applied to the gate. The current in an IGBT flows in two stages, depending on the voltage applied to the gate. When the voltage is low, the IGBT behaves like a normal transistor, allowing current to flow between the emitter and the collector. When the voltage is increased, the IGBT will enter its “saturated” state, where the current is blocked. This is the working principle of the A1C15S12M3 IGBT module. The advantage of this type of configuration is that it allows for quick switching of power with low losses, resulting in increased efficiency and less energy consumed.

Conclusion

The A1C15S12M3 IGBT module is a versatile module that can be used in a wide range of power electronic applications. This module offers excellent performance in areas such as motor control, lighting, electric vehicles and grid-tie solutions. It operates by utilizing a combination of low losses, robust short circuit protection and high gate drive capability. IGBTs in general provide a quick switching of power with low losses, resulting in high efficiency and less energy consumed. This makes the A1C15S12M3 an excellent choice for applications which need to minimize power consumption and increase efficiency.

The specific data is subject to PDF, and the above content is for reference

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