Allicdata Part #: | 497-17741-ND |
Manufacturer Part#: |
A1P35S12M3-F |
Price: | $ 29.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT TRENCH 1200V 35A ACEPACK1 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | A1P35S12M3-F Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 26.64270 |
10 +: | $ 24.85600 |
100 +: | $ 21.58150 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 35A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 35A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 2154pF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | ACEPACK™ 1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IGBT module, also called an insulated gate bipolar transistor module, is a power switching device that combines IGBTs, gate drivers, and related components in a single package. The A1P35S12M3-F is a type of IGBT module with a wide variety of applications and uses.
The A1P35S12M3-F offers superior system integration with simplified construction and higher power density. It also provides superior reliability with a maximum current capacity of 1000 amps. The built-ingate driver further simplifies the design by providing a built-in interface between the IGBTs and the system logic. It also reduces the number of setup steps and eliminates many components previously needed. The A1P35S12M3-F also comes with opto-isolation and temperature monitoring capabilities, which improves the safety and accuracy of system operation.
In terms of its application, the A1P35S12M3-F is well-suited for a variety of applications such as electric vehicle (EV) traction drives, welding and induction heating systems, solar inverters, industrial motor drives, and railway traction drive applications. It offers superior performance, reliable operation and low noise operation.
In terms of working principle, the A1P35S12M3-F module contains IGBTs, which are power semiconductor devices that are used to control the flow of electrons. IGBTs combine the advantages of power transistors, such as high switching speed, high input impedance and low on-state voltage drop, with the advantages of power MOSFETs, such as low on-state resistance and improved thermal conduction. When voltage is applied to the gate of the IGBT, it allows current to flow between the emitter and collector terminals. By controlling the gate voltage, the flow of current through the IGBT is regulated.
A1P35S12M3-F IGBT modules offer improved system integration and even higher power densities than traditional IGBTs, and are also more reliable and easier to install. They provide reliable operation and high efficiency in a wide range of applications, from electric vehicle traction drives to welding and induction heating systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
A1P35S12M3-F | STMicroelect... | 29.31 $ | 22 | IGBT TRENCH 1200V 35A ACE... |
A1P35S12M3 | STMicroelect... | 28.53 $ | 2 | IGBT TRENCH 1200V 35A ACE... |
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