Allicdata Part #: | 497-17740-ND |
Manufacturer Part#: |
A1P35S12M3 |
Price: | $ 28.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT TRENCH 1200V 35A ACEPACK1 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | A1P35S12M3 Datasheet/PDF |
Quantity: | 2 |
1 +: | $ 25.93080 |
10 +: | $ 24.19330 |
100 +: | $ 21.00590 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 35A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 35A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 2154pF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | ACEPACK™ 1 |
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Transistors - IGBTs - Modules
A1P35S12M3 is an inverter grade module made with Insulated Gate Bipolar Transistor (IGBT) technology. It consists of 3 IGBTs with reverse current protection and freewheeling diodes mounted on a single baseplate. The module is designed for use in solar inverters, uninterruptible power supplies (UPS), AC motor drives, and welders.
Features & Benefits
- High power density: up to 2.5 kW/cm^3
- High efficiency: up to 98%
- Low on-state voltage drop and high switching frequency
- High tolerance to over-current situations
- Flexible connection possibilities for all types of devices
Application Fields and Working Principle
The A1P35S12M3 module is widely used in many industrial and consumer applications due to its wide operating temperature range and robust design. It is used in motor drives, DC/AC inverters, solar applications, power supplies, industrial power systems, renewable energy systems and welders.
The A1P35S12M3 module has a three-phase, half-bridge structure with three IGBTs and three reverse conducting Freewheeling diodes. The IGBTs are controlled by a gate drive IC, which is connected to a logic circuit where the pulse width modulation (PWM) command is received. This pulse width modulation of input signals is the main principle of operation for the module: the IGBTs are opened and closed according to the PWM signals to regulate the output, and the Freewheeling diodes provide a path for the induced voltage when the IGBTs are opened.
The A1P35S12M3 module has several safety features including RCD/SCR overload protection, over-voltage, over-temperature and short-circuit protection. This ensures that the module works safely and efficiently in challenging environments without any risk of damage.
Conclusion
The A1P35S12M3 module is a versatile and reliable choice for applications that require high power density and efficiency. Its robust design and wide operating temperature range make it suitable for use in a variety of settings. The module can be configured using PWM signals to achieve the desired operation, and its built-in safety features ensure it operates without any risk of damage in challenging environments.
The specific data is subject to PDF, and the above content is for reference
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