AC857BSQ-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

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AC857BSQ-7 Application Field and Working Principle

The AC857BSQ-7 is a type of transistor array, which can form the foundation for a range of applications. A transistor array is a device with a number of transistors configured in an array, rather than being separate discrete devices. This type of device offers several advantages, such as cost savings, improved performance and size. The AC857BSQ-7 offers further advantages in terms of power efficiency, noise immunity and reduction in circuit complexity.

Types of Array Transistors

Array-based transistors can be classified into two main types: bipolar junction transistors (BJT) and field-effect transistors (FET). The AC857BSQ-7 is a BJT-based transistor array, which means that each transistor is a bipolar semiconductor device which operates by manipulating current flow between two junctions. BJTs are typically used in applications where high current amplification is required, and they can also be used as switches in switching operations.

Features of the AC857BSQ-7

The AC857BSQ-7 is a low-power BJT array with a maximum collector-emitter voltage rating of 45 volts and a maximum collector-base voltage rating of 60 volts. The array is composed of 9 transistors, each of which is connected in a common-emitter configuration. This configuration allows for high levels of current amplification, which is useful when controlling signals with low input drive. The AC857BSQ-7 also includes an integrated protection diode for each of its transistors.

Operating Conditions

The AC857BSQ-7 is designed to operate over a wide range of temperatures, from -55 to +150 degrees Celsius. The device can handle a maximum power dissipation rating of 1.13 Watts, and has a maximum junction temperature of 175 degrees Celsius. It is capable of handling a maximum current of 200 mA.

Working Principle of the AC857BSQ-7

The AC857BSQ-7 operates by controlling the amount of current that flows through each of its transistors (bipolar junction transistors, or BJTs). When current flows through the base-emitter junction of a BJT, the resulting base current is amplified at the collector-emitter junction and then flows out from the collector. By controlling the amount of current flowing through the base-emitter junction, it is possible to control the amplified current that flows through the collector-emitter junction. This can be used to control the output of a circuit.The AC857BSQ-7 can be used in a variety of applications, including analog and digital circuitry, power switching, and control systems. It is particularly well-suited for low-power circuitry, as it can provide high current amplification with minimal power consumption. Its integrated protection diodes also help to increase its reliability and prevent damage due to over-current conditions. In summary, the AC857BSQ-7 is a powerful BJT-based transistor array that is well-suited for a range of applications, and is a cost-effective and reliable solution for controlling analog or digital signals.

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