ACPM-7355-TR1

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RF Amplifiers

The ACPM-7355-TR1 is a high-power amplifier module that leverages GaN on SiC Monolithic Microwave Integrated Circuit (MMIC) technology from Wolfspeed. The ACPM-7355-TR1 is designed for widespread applications in the RF / microwave industry, including telecommunications, wireless, broadband, satellite, and military and aerospace systems.

The ACPM-7355-TR1 is a power amplifier co-packaged in an air-cooled hermetically sealed module with field-replaceable connectors. It is a self-contained power amplifier particular rated for 500 W peak output power at 2.2 GHz. It is a high-gain, single-stage GaN on SiC MMIC amplifier that imparts minimal distortion and maximum efficiency.

The ACPM-7355-TR1 amplifier is designed for applications wherein ultra-low noise and high linearity are desired. It exhibits an excellent noise figure of only 0.4 dB and an inherent 7 to 13% efficiency even under 1 W. This is especially attractive for applications in communication systems such as mobile phones, satellite systems, military receiver and radio links, and medical applications.

The ACPM-7355-TR1 module employs a bias circuit design which uses an external DC voltage supply to generate a current source. This reduces the ACPM-7355-TR1\'s power consumption when compared to other discrete power amplifiers. This feature makes the ACPM-7355-TR1 an ideal choice for mobile and mission-critical portable electronic systems.

The ACPM-7355-TR1’s advanced architecture enable capabilities such as harmonic suppression, low IMD, and thermal shutdown. They are also designed to have superior linearity and stability when used with diverse load conditions. This makes them ideal for situations where high gain and wide frequency range are desired. Additionally, the ACPM-7355-TR1 exhibits excellent isolation between the amplifier and the antenna, eliminating any possibility of cross-coupling.

The ACPM-7355-TR1 also features Wolfspeed\'s advanced GaN-on-SiC MMIC technology. This technology provides superior performance when compared to other processes such as GaAs or GaP. The ACPM-7355-TR1\'s high gain is a result of the GaN-on-SiC advantage of wider bandwidth operation and greater power efficiency.

In addition to the features mentioned, the ACPM-7355-TR1 also exhibits general design features such as superior thermal performance, hermetic sealing, and protection against ESD. All of these features make the ACPM-7355-TR1 an ideal choice for a variety of applications in a wide range of power requirements.

In conclusion, the ACPM-7355-TR1 is a high-power amplifier module that combines GaN on SiC MMIC technology with advanced features to provide high linearity and maximum efficiency for applications in the RF/microwave industry. Its advanced bias circuit design and high gain make it an attractive choice for both mobile and mission-critical portable electronic systems.

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