ACTP250J1BJR-S Circuit Protection |
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Allicdata Part #: | ACTP250J1BJR-STR-ND |
Manufacturer Part#: |
ACTP250J1BJR-S |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Bourns Inc. |
Short Description: | SINGLE BIDIRECTIONAL PROTECTOR |
More Detail: | N/A |
DataSheet: | ACTP250J1BJR-S Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 250V |
Voltage - Off State: | 190V |
Current - Hold (Ih): | 20mA |
Number of Elements: | 1 |
Capacitance: | 125pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Description
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Thyristors are components that use the "trigger" principle to achieve a working state. In general, thyristors only start to conduct shortly after they have received a certain voltage value at the control pole or gate, and then keep conducting until the current passes through them drops to zero. This means that after triggering, the control pole or gate no longer affects the conduction state, making them very beneficial for circuit construction. With the ability to switch currents on and off, thyristors offer a more efficient and reliable alternative to conventional semiconductor components such as transistors. One specific example of a thyristor is the ACTP250J1BJR-S, a Junction Gate Turn-off Thyristor (JGTO) capable of withstanding high voltages and high-level currents. This particular device is intended for applications in the power electronics field. The ACTP250J1BJR-S is comprised of a gate-junction area, a power-junction area and a control-gate lead. It is designed to be turned off easily by a relatively small control-voltage signal.In terms of its working principle, the ACTP250J1BJR-S is a three-layer semiconductor device with a heavily doped NPN-type structure for the control-node side and a PNP-type structure for the load side. When the gate-terminal voltage reaches a certain threshold value, the control-node junction can enter the so-called "on-state" at the same time, thereby enabling the flow of current from the anode to the cathode of the thyristor. This "on-state" current can be turned off by reducing the gate-terminal voltage, which causes the control-node junction to "turn off" and thereby cutting off the current in the thyristor.The ACTP250J1BJR-S offers a number of advantages in terms of power-electronic applications. Its high lock-in voltage and junction-temperature characteristics make it suitable for controlling higher voltage and current loads, such as those encountered in motor drives and other low current control applications. Additionally, its soft latching behavior ensures that it can remain off even during voltage spikes. Its low gate current requirements enable controlled switching over a wide range of current levels, meaning that it is less likely to be damaged by high current applications.In conclusion, the ACTP250J1BJR-S is an ideal solution for power-electronic applications, as it is highly reliable and efficient in controlling higher voltage and current levels. Its three-layer semiconductor structure and soft latching characteristics ensure that it can remain off during voltage spikes. Additionally, its low gate current requirements mean that it can be controlled over a wide range of current levels without being damaged.
The specific data is subject to PDF, and the above content is for reference
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