ACZRM5234B-HF Datasheet/PDFACZRM5234B-HF Application Field and Working Principle
The ACZRM5234B-HF diode belongs to the diode-Zener single type family. The diode has a built-in junction field effect transistor (JFET) structure, a reverse blocking voltage of 5.2V and a breakdown voltage of 7.5V. The maximum stand-off voltage is 10.8V. It has minimum design bias with a PN junction breakdown voltage of 8.5V. It has an optimal operation temperature of -55 to 125°C with a low forward voltage drop of 0.25V.
The ACZRM5234B-HF is mainly used in medium-voltage applications. It can handle high-power loads with a power dissipation of 420mW, and a storage and operating temperature of -55°C to 125°C. It also has an excellent thermal and electrical performance with a thermal resistance of 1.2°C/W and an effective junction capacitance of 0.55pF. Aside from its use in high-voltage applications, the device can also be used in medical, industrial, automotive, and aerospace applications.
The ACZRM5234B-HF diode is used as a reference voltage regulator, protection device, and as a voltage-steering and switching device. Its main purpose is to regulate an output voltage to a specific level by acting as an electrical shunt or a reverse biased diode. It works by sensing a reference voltage and adjusting the current passing through the device to produce the required voltage. It works by passing current through the device and controlling the current by adjusting the width of the PN junction and controlling the voltage.
The ACZRM5234B-HF diode has a high power handling capacity and a low forward voltage drop. It has the ability to control both current and voltage, making it a versatile device for controlling voltages in both high-voltage and medium-voltage applications. Its low forward voltage helps to reduce power consumption, making it an efficient device for voltage regulation.