ACZRW5253B-G

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Diodes - Zener - Single

ACZRW5253B-G is a single Zener diode. A Zener diode is an electronic component that allows current to pass in both directions with an avalanche breakdown that occurs when the reverse-biased voltage is above a given breakdown voltage. It is a special type of diode which, unlike a conventional diode, allows the current to flow in the reverse direction. The breakdown voltage of a Zener diode depends on the type of semiconductor material used to make the diode.

The ACZRW5253B-G has a power dissipation rating of 0.5W (maximum) and a breakdown voltage of 5.2V. The diode is built with a glass Topcoat-Free package and can operate at temperatures of -55°C to +125°C. The device is also designed to withstand reverse-biased voltages up to 800 V.

The primary application of the ACZRW5253B-G is as a voltage regulator. The Zener diode maintains a constant voltage across its terminals by regulating the flow of current through it. When the voltage across the diode exceeds its breakdown voltage, the diode begins to conduct current, thus limiting the voltage across it to the Zener voltage. This effectively acts as a voltage regulator, allowing the diode to maintain a constant output voltage, regardless of changes in the input voltage.

The device also has protection applications, such as providing over-voltage protection. When the voltage across the diode reaches its breakdown voltage, it begins to conduct current, discharging the excess voltage and thus limiting the voltage across the diode.

Other applications of the ACZRW5253B-G include low current switching and field effect transistor (FET) driving. Because of its low power dissipation and high breakdown voltage, the device is well-suited for low current switching applications. It can also be used as a driver for FETs, as the device can source or sink current for a short duration of time.

In summary, the ACZRW5253B-G is a single Zener diode that is commonly used as a voltage regulator and for protection applications. It is also useful for low current switching and FET driving. The device has a power dissipation rating of 0.5W and a breakdown voltage of 5.2V. Additionally, the device is built with a glass Topcoat-Free package and can operate at temperatures of -55°C to +125°C.

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