Allicdata Part #: | ADP3412JR-ND |
Manufacturer Part#: |
ADP3412JR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC MOSFET DVR DUAL N-CH 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | ADP3412JR Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | -- |
Base Part Number: | ADP3412 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 20ns, 20ns |
High Side Voltage - Max (Bootstrap): | 30V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2V |
Voltage - Supply: | 4.15 V ~ 7.5 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tube |
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PMIC - Gate Drivers encompasses a group of devices that are designed specifically to drive the gate voltage of an electronic device. The ADP3412JR is a typical example one such device. This paper will talk about the application field and working principle of this particular device.
The ADP3412JR is a high-side Gate Driver IC. It is designed to operate in both a linear voltage regulation and a switching mode topology. It is capable of controlling both power stages and FETs (field-effect transistors). This makes it suitable for a variety of different applications.
The ADP3412JR has two integrated Mosfets to drive, each with a gate resistance of 0.4 Ω, which ensures efficient control of high power stages. The ADP3412JR includes an adjustable power channel to accommodate changes in load regulation and a high overvoltage protection feature sets it apart from other gate driver ICs. Furthermore, the IC has a frequency modulation and an internal shut-down feature.
The ADP3412JR is also designed to reduce EMI emissions. It is equipped with an adjustable slew rate, soft start, and a low quiescent current to reduce the load on the power stage. Additionally, the integrated isolation buffer provides higher isolation between the power stages, reducing radiated emissions and improving signal integrity.
The working principle of the ADP3412JR is quite simple. During operation, the control input (also called the Gate) is used to control the power application to the power device. When the control input is high, the power device is in a high-side position. This means that the power application is sent through the high-side Mosfet. When the control input is low, the power application is sent through the low-side Mosfet.
The ADP3412JR has two outputs. The first output is the voltage-controlled output (VCO). This output is used to regulate the supply voltage to the power device. The second output is the High-side Gate Drive Output (HGD). This output is used to control the high-side Mosfet. The HGD output is also adjustable to allow for more precise control of the power device.
The ADP3412JR has many advantages. It offers a high-current capability along with an adjustable slew rate. Additionally, it has a low quiescent current, an adjustable power channel, and an overvoltage protection feature. This makes it ideal for a variety of applications.
In conclusion, the ADP3412JR is an ideal component for high-power applications. It has an adjustable slew rate and an overvoltage protection feature, making it suitable for a variety of different topologies. Its adjustable power channel and low quiescent current also help to reduce EMI emissions. This makes it an ideal choice for any power management system.
The specific data is subject to PDF, and the above content is for reference
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