AGP15-800HE3/54 Allicdata Electronics
Allicdata Part #:

AGP15-800HE3/54-ND

Manufacturer Part#:

AGP15-800HE3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 800V 1.5A DO204
More Detail: Diode Avalanche 800V 1.5A Through Hole DO-204AC (D...
DataSheet: AGP15-800HE3/54 datasheetAGP15-800HE3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: AGP15
Description

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AGP15-800HE3/54 Application Field and Working Principle

The AGP15-800HE3/54 is a single-phase, Shottky-barrier rectifier diode manufactured by Vishay Intertechnology. The diode is rated at 800V with a current rating of 15A. It has an Isolation Voltage of 3750Vdc and a Reverse Recovery Time of 35ns. It provides fast, efficient rectification in applications up to the 800V range.

The AGP15-800HE3/54 is most commonly used in applications requiring low forward voltage drop and fast switching times including: switching power supplies, polarity protection, EMI filtering, solar-cell drives, and for other high-voltage applications where fast switching is required. It is also suitable for UPS, telecom, and lighting applications.

The diode works on the principle of reversed biased junction diode operation. When a negative voltage is applied to the diode cathode, the diode is reverse biased and no current can flow through the diode. This state is known as the reverse-bias breakdown or Zero-Bias Junction. When a positive voltage is applied to the anode, the diode is forward biased, allowing a current to flow through it. This current is referred to as the forward-bias current.

The advantage of the AGP15-800HE3/54 is its fast switching times, high reverse breakdown voltage, low forward voltage drop and low leakage current. The device features junction temperature derating and also features high-current and high-voltage capability coupled with a low-thermal resistance. The device also features overvoltage protection which is important for high-voltage applications.

The AGP15-800HE3/54 has a high power dissipation capability, making it suitable for a wide range of applications. It can be used in high-voltage, high-current applications such as UPS, Telecom, and lighting applications. It is also suitable for motor drive applications where higher power and higher voltage are required.

In conclusion, the AGP15-800HE3/54 is a versatile, single-phase, Shottky-barrier rectifier diode providing fast switch times, low forward voltage drop, low leakage current and high reverse breakdown voltage in applications up to the 800V range. It is suitable for a wide range of high-voltage, high-current applications including switching power supplies, polarity protection, EMI filtering, solar-cell drives, motor drives, UPS, telecom, and lighting applications. Its high power dissipation capability, fast switching time, and low thermal resistance makes it a suitable choice for many high voltage, high current applications.

The specific data is subject to PDF, and the above content is for reference

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