
AK6516CF Integrated Circuits (ICs) |
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Allicdata Part #: | AK6516CFTR-ND |
Manufacturer Part#: |
AK6516CF |
Price: | $ 1.67 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | AKM Semiconductor Inc. |
Short Description: | IC EEPROM 256K SPI 10MHZ 8SOP |
More Detail: | EEPROM Memory IC 256Kb (32K x 8) SPI 10MHz 8-SOP |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 1.52356 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 1.6 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The AK6516CF memory is a type of flash memory developed by Toshiba that provides high-speed read and write operations in both normal and extended temperature ranges.
The AK6516CF memory is suitable for automotive, consumer and industrial applications due to its ability to withstand extended temperature ranges. Its low voltage operation (1.8V to 3.6V) also allows it to be used in low power applications. The fast read and write speed of the AK6516CF memory make it an ideal choice for applications such as data logging, memory caches and data buffering.
In addition to its fast read and write speeds, the AK6516CF memory also features high endurance and data write protection ability. The endurance is enhanced by using Flash Cell Refresh (FCR) algorithms to refresh memory cells on a regular basis and the protection ensures data integrity and security against unintentional erasure or programming.
The AK6516CF memory’s working principle is based on allowing charge to flow from the Source to the Drain of a memory cell when a small voltage is applied to its control gate. This flow of charge modifies the charge stored in the memory cell and changes the state of the cell. This allows data to be written to, and read from, the memory cell.
To read the data stored in the memory cell, a voltage is applied to the control gate and the corresponding current flow is measured. The charge stored in the memory cell is then interpreted as a binary value and is fed back to the application. This data can be read and written to the memory at high speed.
Given its ability to offer efficient read and write operations, the AK6516CF memory is ideal for use in applications that require high-speed data transfer such as data logging, memory caches and data buffering. It is also suitable for automotive, consumer and industrial applications due to its ability to withstand extended temperature ranges and its low voltage operation.
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