Allicdata Part #: | 1014-1214-ND |
Manufacturer Part#: |
ALD210800ASCL |
Price: | $ 3.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 0.08A 16SOIC |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA ... |
DataSheet: | ALD210800ASCL Datasheet/PDF |
Quantity: | 43 |
1 +: | $ 3.50910 |
10 +: | $ 3.13362 |
100 +: | $ 2.56945 |
500 +: | $ 2.08062 |
1000 +: | $ 1.75474 |
Series: | EPAD®, Zero Threshold™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | 25 Ohm |
Vgs(th) (Max) @ Id: | 10mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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ALD210800ASCL Application Field and Working Principle
ALD210800ASCL is an array of 2 x 4 field-effect transistors (FETs). It integrates 8 transistors in a single package, and is used for a variety of circuits, including low noise and low power amplifier, analog switches, multiplexers, and analog-to-digital converters. It is an ideal choice for designers looking for a highly integrated and cost-effective solution for their applications.
ALD210800ASCL Technology
ALD210800ASCL is built with Enhanced Embedded Gallium Nitride (eGaN)-based process technology. This technology is composed of high-switching-speed devices and low-leakage-current, which together enable improved performances. The eGaN process enables excellent on-resistance, low gate-capacitance, and fast switching speed. Furthermore, it eliminates the need for sourcing, such as external diodes, ensuring faster signal process. These all make ALD210800ASCL an ideal choice for designers requiring superior performance.
ALD210800ASCL Working Principle
The working principle of ALD210800ASCL is based on the principle of vibrator circuit. A FET array is used to obtain a very high-speed signal processing, along with low noise and low power consumption. The structure of the array consists of two sets of 4 transistors, connected in series. The first set acts as a source of signal while the second set acts as input amplifiers. Each amplifier increases the signal, thus enabling high speed signal transfer.
When a signal is passed through the device, one of the two sets of transistors acts as an amplifier, producing a high gain. This gain is then passed through the other set of transistors which then amplifies the signal further, resulting in an improved signal level, allowing high speed signal processing. This is the basis of the working principle of ALD210800ASCL.
ALD210800ASCL Applications
ALD210800ASCL can be used in a wide array of applications, such as low noise and low power amplifiers, multiplexers, analog switches and analog-to-digital converters. Its high-speed switching capabilities make it suitable for high-performance application requiring superior signal quality. Furthermore, its excellent on-resistance and low gate-capacitance are used to reduce electromigration and enhance data transmission.
The ALD210800ASCL is an ideal choice for designers looking for an integrated, cost-effective and high-performance solution to their application needs.
The specific data is subject to PDF, and the above content is for reference
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