Allicdata Part #: | ALD210808PCL-ND |
Manufacturer Part#: |
ALD210808PCL |
Price: | $ 2.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 0.08A 16DIP |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA ... |
DataSheet: | ALD210808PCL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.98878 |
Series: | EPAD®, Zero Threshold™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 16-DIP (0.300", 7.62mm) |
Supplier Device Package: | 16-PDIP |
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The ALD210808PCL is an array of power Field-Effect Transistors (FETs) that is suitable for numerous applications. These devices are usually used in circuits where high current and power is needed, offering excellent performance and reliability in a wide range of operating conditions. These FETs are ideal for providing high current, low power dissipation and low switching losses. The ALD210808PCL has very low Rds(on), which makes it an excellent choice for applications such as power supplies, battery chargers, audio power amplifiers, and radio frequency (RF) amplifier circuits.
The ALD210808PCL is typically used for controlling large loads or loads that require low voltage. This type of FET can also work in high-current applications where lower power dissipation is an issue. The array of FETs can efficiently switch the load current and prevent excessive power dissipation since the Rds(on) is very low. The ALD210808PCL has a wide range of operating temperatures and a very low gate threshold voltage in order to facilitate switching loads with low gate drive voltages.
The ALD210808PCL uses an eight transistor array that comprises of four FETs with an N-channel and four FETs with a P-channel. This combination provides an effective mechanism to couple the FETs in parallel for increased current capability. The FETs themselves are formed from a thin layer of semiconductor material, or insulator, which means that any current flowing from the drain to source is limited to a certain level. The gate voltage can be adjusted to control the current flowing from source to drain. When the gate is configured to a certain voltage, it acts as an electrical barrier, preventing the flow of excess current.
The ALD210808PCL features a low gate capacitance and a very low gate threshold voltage, meaning that the device is suitable for controlling high loads. The gate capacitance is a measure of how much charge is stored in the gate capacitances in order to switch a device, while the threshold voltage is the voltage that needs to be applied to the gate to turn the device on. By keeping the gate capacitance and the threshold voltage low, the device can switch more quickly, which is beneficial in a wide range of applications.
The low gate capacitance and low threshold voltage also allows the ALD210808PCL to be used in high-frequency applications. The devices have wide bandwidth, meaning they can handle higher frequencies than other FETs. This is useful in RF and microwave applications, where the circuit design needs to be optimized to transmit radio waves at specific frequencies.
The ALD210808PCL is an affordable and highly reliable array of FETs that is suitable for many applications. It is versatile, efficient, and can provide excellent performance in a wide range of operating conditions. The array of FETs can be used in circuits where high current and power is needed, and with its excellent switching performance, low Rds(on), low gate capacitance, and low threshold voltage, it is a great choice for applications requiring high switching speeds and excellent efficiency.
The specific data is subject to PDF, and the above content is for reference
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