ALD212908PAL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ALD212908PAL is a high performance array of small signal N-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) from Alpha and Omega Semiconductor. This array device is part of the company’s Super-PAC (Superior Performance and Reliability through Advanced Circuit and Packaging technologies) series. These types of transistors, commonly known as FETs (field effect transistors) or MOSFETs (metal-oxide-semiconductor FETs), are used in a wide variety of electrical and electronic circuits, from audio amplifiers and operational amplifiers to microcontrollers and automotive systems.

The primary application field of the ALD212908PAL is in Power Management and Motor Drive applications. This array of transistors is designed to offer superior performance in applications requiring high switching speeds, high levels of integration, and low voltage operation. Specifically, the main features of this device include low on-resistance, high frequency switching, high efficiency, and a small form factor.

The ALD212908PAL consists of 8 P-Channel Enhancement Mode MOSFETs in a single package. Each transistor has a total gate charge of 2.6nC and a maximum drain-source on-resistance of 13.2mΩ at 4.5V. It also supports a wide operating temperature range from -40℃ to 125℃ and has been rated for operation at up to a maximum DC voltage of 40V. This array of transistors can be used for a variety of low voltage and low power applications, including small signal switching, general purpose switching and drive circuits, and power management and motor drive applications.

The working principle of the ALD212908PAL is based on the general structure and operating principles of FETs, including their inherent advantages. A FET by definition is a three-terminal electronic device that controls current flow between a drain and a source by means of an electric field. The main components of a FET are the source, the gate, and the drain. When a gate voltage is applied to the FET, it induces an electric field between the source and the drain and causes current to flow between them. This current flow can be controlled by varying the gate voltage, and this is what makes the FET such a useful device for a variety of applications. The main advantages of FETs are their small size, low power consumption, and high performance.

The ALD212908PAL is a great choice for power management and motor drive applications because it offers low output capacitance, low-on resistance, low gate charge, high frequency switching and high efficiency. This array device is also offers a high degree of integration, which reduces cost and system complexity, and helps enhance reliability. In addition, its small form factor makes it an appealing choice for many applications where compact size is desirable.

To summarize, the ALD212908PAL is a high performance array of N-channel MOSFETs from Alpha and Omega Semiconductor that is designed for power management and motor drive applications. This array of transistors offers superior performance, low on-resistance, high frequency switching, and high efficiency. In addition, it also features a small form factor and a wide operating temperature range. The working principle of the ALD212908PAL is based on the general structure and operating principles of FETs, including their inherent advantages. With its high level of performance, reliability, and cost savings, the ALD212908PAL is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference