ALD810016SCL

The ALD810016SCL is a special purpose transistor. It is a power transistor of the Lateral Diffused Metal Oxide Semiconductor (LDMOS) family. It is used for power switching applications, voltage regulation applications and power amplifier applications. It is also used in high-efficiency systems in computer servers, telecom systems and industrial applications.

Properties of ALD810016SCL

The ALD810016SCL is a N-channel MOSFET transistor that has high current rating and low gate-to-drain capacitance. It is a high voltage surface-mount device that has power transistor capability and is designed to handle up to 100V drain–source breakdown voltage. It also has a low input capacitance of 75pF, a low thermal resistance of 2.6°C/W, and a maximum continuous drain current of 16A.

Application Fields of ALD810016SCL

The ALD810016SCL is suitable for a variety of power switching, voltage regulation and power amplifier applications. It can be used for switching power supplies, voltage regulators, radio transmitters and amplifiers, solar inverters, and a variety of power management designs. It is also used in battery charging designs, UPS systems and in Ethernet bridge control circuit applications.

Working Principle of ALD810016SCL

The ALD810016SCL works by using a N-channel MOSFET transistor process to control the flow of current. It uses a breakdown voltage of up to 100V to control the flow of current in power switching applications and voltage regulation applications. The transistor is used to switch current between a source and a load. When a gate voltage is applied, current flows from the source to the load and when the gate voltage is removed, the current flow stops.

Advantages of ALD810016SCL

The ALD810016SCL is an ideal choice for power switching and voltage regulation applications due to its low input capacitance, low thermal resistance, high-current rating and low gate-to-drain capacitance. It has the power transistor capability to switch high currents quickly and with precision. The ALD810016SCL also has a high breakdown voltage of up to 100V and is designed to handle high power capacities.