PMD4003K,115 Allicdata Electronics
Allicdata Part #:

PMD4003K,115-ND

Manufacturer Part#:

PMD4003K,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: IC MOSFET DRIVER SC-59A
More Detail: Transistor Gate Driver NPN + Base-Emitter Diode 40...
DataSheet: PMD4003K,115 datasheetPMD4003K,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN + Base-Emitter Diode
Applications: Gate Driver
Voltage - Rated: 40V
Current Rating: 1A
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Description

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PMD4003K,115 Application Field and Working Principle

The PMD4003K,115 is a type of transistor which is classified under the category of special purpose transistors. It is a high-speed, high-frequency vertical diffused N-channel MOSFET, which is specifically designed for DC switching applications. This type of transistor provides excellent quality performance in a wide variety of applications, such as high current switches and power regulation in motor controllers.

Application Fields of the PMD4003K,115

The PMD4003K,115 is often used in motor controllers, power management systems and power converters. The most common applications of this type of transistor include DC motor speed and position control, high voltage DC/DC converters, power switches, industrial power controllers, and many others.

This type of transistor is also used in various radio applications such as radio receivers, radio transmitters, communications systems and wireless networks. The PMD4003K,115 is well suited for these applications due to its higher power capability, fast switching speeds and improved signal quality.

In addition to this, the PMD4003K,115 is also often used in various types of medical equipment, such as imaging and healthcare devices. This type of transistor is well suited for medical applications due to its low cost, low power consumption and low temperature coefficients.

Working Principle and Features of the PMD4003K,115

The PMD4003K,115 is a vertical diffused N-channel MOSFET which is made up of a silicon substrate layer, a thin gate dielectric (made up of either silicon dioxide or polysilicon) and a top gate electrode. The principle of operation of the PMD4003K,115 is based on the field-effect mechanism. It works by establishing an electric field in the substrate layer between the two electrodes, which alters the resistance of the channel between them.

This type of transistor has several features and advantages, such as a higher body-diode reverse recovery time, low gate leakage current, fast switching speed, enhanced power handling capability, improved signal quality and low noise generation. In addition to this, the PMD4003K,115 also has a wide temperature operating range and is capable of operating over a wide range of voltages and currents.

Conclusion

The PMD4003K,115 is a high-speed, high-frequency vertical diffused N-channel MOSFET transistor, which is used in a variety of applications, such as motor controllers, power converters and radio applications. It has several features and advantages, such as a higher body-diode reverse recovery time, low gate leakage current, fast switching speed, enhanced power handling capability, improved signal quality and low noise generation. The working principle of the PMD4003K,115 is based on the field-effect mechanism. This type of transistor is classified under the category of special purpose transistors.

The specific data is subject to PDF, and the above content is for reference

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