ALD910022SAL Allicdata Electronics
Allicdata Part #:

1014-1282-5-ND

Manufacturer Part#:

ALD910022SAL

Price: $ 2.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET DUAL SAB 10.6V EE 8SOIC
More Detail: Transistor Supercapacitor Auto Balancing 2 N-Chann...
DataSheet: ALD910022SAL datasheetALD910022SAL Datasheet/PDF
Quantity: 506
1 +: $ 2.17980
10 +: $ 1.96749
100 +: $ 1.58124
500 +: $ 1.22984
1000 +: $ 1.01901
Stock 506Can Ship Immediately
$ 2.4
Specifications
Series: SAB™
Packaging: Tube 
Part Status: Active
Transistor Type: 2 N-Channel (Dual)
Applications: Supercapacitor Auto Balancing
Voltage - Rated: 10.6V
Current Rating: 80mA
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The ALD910022SAL is a type of transistor, classified as ‘special purpose’. This type of transistor is not as common as other transistors such as bipolar junction transistors (BJT) and field effect transistors (FET), but they can still be valuable in certain applications. In this article, we will take a closer look at the characteristics and working principles of the ALD910022SAL, as well as discuss some of its possible applications.

The ALD910022SAL is a medium power dual-gate field effect transistor. The device is designed to operate in the UHF-VHF range. It offers excellent gain and high linearity performance, which makes it useful for radio frequency and microwave applications. The transistor also features a low noise figure, low distortion, and a wide bandwidth. In addition, the ALD910022SAL provides excellent third-order intercept points which make it suitable for linear applications.

The ALD910022SAL transistor is a field effect device, which means that it is controlled by an electric field. In contrast to a bipolar junction transistor, the ALD910022SAL does not rely on the flow of current to control its operation. Instead, it is able to control the current by altering the electric field between two points. The two points are known as the source and the drain, and are separated by a thin layer of non-conductive material which is known as a gate.

When a voltage is applied to the gate of the ALD910022SAL, it causes electrons to be drawn to the gate. This, in turn, increases the electric field between the source and drain, which reduces the resistance between the two points. This is known as a ‘negative resistance’ effect, because the current is increasing even when the voltage is reduced. This makes the ALD910022SAL useful for power conversion applications, such as high frequency switching.

Apart from its power conversion properties, the ALD910022SAL also offers excellent linearity performance. This is because of the way it is able to control the current flow by altering the electric field. This makes the transistor useful for radio frequency and microwave applications, where linearity performance is important. The device can also provide excellent gain, which makes it ideal for amplifying weak signals.

Another application where the ALD910022SAL can be used is as a RF switch. When configured as a switch, the transistor can be used to control the flow of current from one point to another. This makes it useful for switching in radio frequency circuits. The ALD910022SAL can also be used for some analog applications, such as low noise amplifiers and RF detectors.

The ALD910022SAL is a powerful and versatile transistor, which offers excellent performance across a wide variety of applications. Its good linearity performance makes it suitable for radio frequency and microwave applications, and its negative resistance effect makes it suitable for power conversion applications. Furthermore, the device can also be used as a switch in RF circuits, and for analog applications such as low noise amplifiers and RF detectors. With all of these features, the ALD910022SAL is a valuable device for any engineer.

The specific data is subject to PDF, and the above content is for reference

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