AOK30B120D2 Allicdata Electronics
Allicdata Part #:

AOK30B120D2-ND

Manufacturer Part#:

AOK30B120D2

Price: $ 2.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 1200V 30A TO-247
More Detail: IGBT 1200V 60A 340W Through Hole TO-247
DataSheet: AOK30B120D2 datasheetAOK30B120D2 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
240 +: $ 1.93919
Stock 1000Can Ship Immediately
$ 2.14
Specifications
Switching Energy: 1.28mJ (off)
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/115ns
Gate Charge: 67nC
Input Type: Standard
Series: Alpha IGBT™
Power - Max: 340W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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The AOK30B120D2 device, classified under Transistors - IGBTs - Single, is a medium voltage insulated gate bipolar transistor. This type of transistor is used in power switching applications, such as motor and power supply control. It allows for higher power cycling capabilities and therefore better performance. The AOK30B120D2 is unique in this class of transistors because it is a single-package device, which can be used in more compact systems.

The AOK30B120D2 application field is mainly utility grade applications and can be used in remote monitoring and control system with signal conditioning and protection. This type of resistor is also suited for use in industrial and building automation applications. The transistor is also suited for use in power supply design, power modulation, and more.

The working principle of this transistor is based on bipolar junction technology. This technology has been in use since the 1970s and provides faster switching than insulated gate transistors (IGT). The AOK30B120D2 operates with a 200 V or 400 V drain to source voltage, with a 700 bar gate-emitter voltage. At a temperature of 25°C it can reach a maximum power dissipation of 2.2 W, therefore suitable for medium power systems.

The AOK30B120D2 combines the fast switching mentioned previously with an withstand voltage of 1700V. This rating is extremely high and can be used in a wide range of applications. The gate drive of this device also exhibits an output valve of up to 30A. The transistor has an on state resistance (RDS-on) of 0.125 Ohm, which is extremely low and compared with other types of transistors.

In terms of efficiency, the AOK30B120D2 features a Ceramic Over Voltage Protection (CVP) and a current detection circuit. This means that in the event of an overcurrent condition, the transistor will be turned off, protecting the device from damage. In addition, the transistor has a low gate charge and absence of Miller plateau, which increases efficiency and increases power cycling performance.

The AOK30B120D2 is a unique type of transistor that combines high-performance switching, high withstand voltage, and low resistance with a single-package design. This makes it suitable for a wide range of applications, and its reliability makes it a popular choice for power switching systems. As a result, it is a go-to choice for many engineers when they need a reliable power device.

The specific data is subject to PDF, and the above content is for reference

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