AOK30B60D1 Allicdata Electronics
Allicdata Part #:

785-1621-5-ND

Manufacturer Part#:

AOK30B60D1

Price: $ 1.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 600V 60A 208W TO247
More Detail: IGBT 600V 60A 208W Through Hole TO-247
DataSheet: AOK30B60D1 datasheetAOK30B60D1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
240 +: $ 1.43608
Stock 1000Can Ship Immediately
$ 1.58
Specifications
Series: Alpha IGBT™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Power - Max: 208W
Switching Energy: 1.1mJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 34nC
Td (on/off) @ 25°C: 20ns/58ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 120ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The AOK30B60D1 is a high voltage insulated gate bipolar transistor, or IGBT, that is designed for power conditioning applications. This IGBT has a 30A current rating, a breakdown voltage of 600V, and a direct gate drive. It is a single type of IGBT, with a monolithic construction.

IGBTs are switching devices for high current and voltage levels, and are widely used in various fields, such as lighting, motor control, energy storage systems, solar power, and AC/DC converters. This particular IGBT is suitable for a variety of applications, including solar panel inverters, AC/DC converters, UPS systems, motor drive systems, and more.

The AOK30B60D1 has a very low gate charge, a fast switching speed, and very low losses in both the conductor and semiconductor. This makes it ideal for power conditioning applications, as it can help to reduce power loss and increase efficiency. Additionally, the IGBT has a very high thermal resistance, which makes it suitable for operating in high temperatures. This makes it particularly useful in applications that require high temperature operation.

The IGBT has a gate voltage of 10V and a gate current of 7mA. It is capable of withstanding positive and negative pulsed gate currents of up to 200µA. The gate and emitter connection is cathode connected, and the collector connection is anode connected. The IGBT also features a self-locking protection circuit, which prevents false triggering of the discharge transistor.

The working principle of the AOK30B60D1 IGBT is based on a bipolar transistor that operates in two basic modes: ON/OFF and linear. In ON/OFF mode, the transistor is switched ON and OFF at regular intervals, thus controlling the current flow. In linear mode, the transistor allows for current to be adjusted by controlling the base current.

The IGBT uses insulated gate technology, which allows for a faster switching time and better efficiency compared to other types of transistors. This allows the IGBT to be used in applications that require fast switching and high efficiency. Additionally, the IGBT has a low saturation voltage and high current capacity, which makes it ideal for use in high current and voltage applications.

The AOK30B60D1 IGBT is a single type of IGBT, and is designed for power conditioning applications. It has a very low gate charge and a fast switching speed, and is able to withstand high temperatures. The IGBT is capable of operating in two modes: ON/OFF and linear, and is designed to reduce power loss and increase efficiency in power conditioning applications. It has a gate voltage of 10V and a gate current of 7mA and is equipped with a self-locking protection circuit. The AOK30B60D1 IGBT is a great choice for applications that require a reliable switching option.

The specific data is subject to PDF, and the above content is for reference

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