AOK60B65H1

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AOK60B65H1 Application Field and Working Principle

The AOK60B65H1 is a high-voltage insulated gate bipolar transistor (IGBT) module designed for advanced motor drives and solar inverter applications. It features a low RDS(on) of around 5.6 mΩ, as well as an average collector current capacity of up to 65A. This module is built with advanced Ultra Low VCE(sat) chip, which helps reduce conduction losses during operation.

Application Field

The AOK60B65H1 IGBT module is primarily used in specific advanced motor drive application fields, such as high-power alternators, AC drive, DC drive, wind power, solar inverter, and other high-power servo systems. It can also be used in various other applications, such as welding machines and induction heaters. In motor drives, the AOK60B65H1 IGBT module can provide excellent power efficiency and reliability.

Working Principle

The AOK60B65H1 IGBT module is composed of a chip-level component, as well as a baseplate block. The chip-level component consists of an insulated gate bipolar transistor (IGBT) and a free-wheeling diode (FRD). The IGBT and the FRD are connected via gate control leads and are encapsulated in an epoxy housing with cooling fins. The main component of the AOK60B65H1 IGBT module is the insulated gate bipolar transistor, which consists of an emitter and two collector contacts. During operation, the IGBT is switched on and off using voltage signals applied to the gate lead. When the voltage is applied to the gate lead, it induces a flow of electrons across the junction between the emitter and collector contacts. This results in the switching of the IGBT from the OFF-state to the ON-state.

The voltage applied to the gate lead must be greater than the threshold voltage of the IGBT so that it can switch on. When the voltage is removed, the IGBT is switched to the OFF-state. This is due to the rapid depletion of electrons across the emitter and collector contacts, resulting in the blocking of current flow. The AOK60B65H1 IGBT module also features an integrated free-wheeling diode, which helps protect the module from high-voltage spikes and provides additional protection against short-circuit conditions.

Conclusion

The AOK60B65H1 IGBT module is designed for advanced motor drives and solar inverter applications. It is composed of a chip-level component and is built using an advanced Ultra Low VCE(sat) chip, improving power efficiency and reliability. The IGBT integrated in the module is turned on and off through the application of gate control voltage signals. In addition, the device also features a built-in FRD which improves protection against high-voltage spikes and short-circuit conditions.

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