AOK60N30L Allicdata Electronics
Allicdata Part #:

785-1449-5-ND

Manufacturer Part#:

AOK60N30L

Price: $ 2.77
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 300V 60A TO247
More Detail: N-Channel 300V 60A (Tc) 658W (Tc) Through Hole TO-...
DataSheet: AOK60N30L datasheetAOK60N30L Datasheet/PDF
Quantity: 571
1 +: $ 2.52000
10 +: $ 2.25162
240 +: $ 1.84614
720 +: $ 1.49492
1200 +: $ 1.26078
Stock 571Can Ship Immediately
$ 2.77
Specifications
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 658W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 56 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOK60N30L is a trench MOSFET which utilizes a unique and cutting edge trench process technology.

MOSFETs are made of metal, oxide and semiconductor materials. The metal layer acts as the "gate" within the device, controlling the packing of electrons in the oxide and the semiconductor. The oxide layer acts as insulation, preventing the electrons from flowing across it, and the semiconductor layer has two cross-sectional areas, allowing electrons to pass from one side to the other.

The AOK60N30L utilizes trenches in its production process that provide charge control, resulting in lower switching and dynamic losses compared to regular MOSFETs. The device also features an ultra low on-resistance compared to traditional MOSFETs, which makes it ideal for high current applications. Additionally, the device has a low gate charge, large gate-source-drain voltage, and can operate at high frequencies up to 100MHz. The device is also easily drivable and provides excellent thermal stability.

The AOK60N30L is a good choice for applications in audio amplifiers, switching power supplies, motor drivers, and power management circuits. It can also be used in DC-DC converters, on-board DC motor drivers, home theater systems, and most general switching applications.

The working principle for AOK60N30L is simple. When an applied voltage exceeds a certain threshold, it induces two charge carriers, electrons and holes, in the gate insulating layer. These carriers form an inversion layer on the surface of the transistor, creating a conductive path between the source and drain contacts. As a result, current flow is increased, allowing the transistor to act as a switch.

AOK60N30L is an advanced version of a MOSFET and takes advantage of the improved switching capabilities and low on-resistance. Additionally, its low gate charge requires less driving current, making it ideal for low-power applications. Its high frequency capability also makes it well-suited for applications such as switching power supplies and DC-DC converters.

In summary, AOK60N30L is a high performance, low-cost trench MOSFET that provides excellent switching and dynamic characteristics. It is an ideal device for applications such as audio amplifiers, power management circuits, switching power supplies, and DC-DC converters. Additionally, its low gate charge and high frequency capabilities make it a great choice for low-power and complex switching applications.

The specific data is subject to PDF, and the above content is for reference

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