AOT5B65M1

AOT5B65M1 is an IGBT (Insulated Gate Bipolar Transistor) device with enhanced current handling performance. It belongs to the N-channel enhancement type MOSFET family and is mainly used in high power switching and bidirectional transistor applications.

The AOT5B65M1 is a single IGBT device in a TO-220-5 package. It has an enhanced dielectric isolation of 1500V with a high current-carrying capability of up to 28A. This makes it ideal for use in motor control applications, as it is highly resistant to high voltage breakdowns. It also has a maximum junction-gate voltage rating of 600V, which provides a wide range of gate control voltages to suit a variety of applications.AOT5B65M1 has a wide range of potential applications, for instance, motor control, light dimmer circuits, power supplies, UPSs, solar inverters and induction heating equipment. Due to its low on-state saturation voltage and superior current-handling ability, the AOT5B65M1 is becoming increasingly popular in many power switching applications.

The working principle of the AOT5B65M1 can be described in two parts. First is the active switching part, where the gate bias voltage is applied to the MOSFET channel. This creates an electric field, or electromotive force (EMF), across the MOSFET channel. When the voltage reaches a certain level, the field strength pushes the electrons out of the channel, switching off the device. The second part is the "tail current" part, where the remaining electrons that are still lingering in the MOSFET channel must be removed. This is done by applying a reverse bias voltage to the gate terminal, which removes the electrons from the channel.

In conclusion, AOT5B65M1 is a popular single IGBT device which is suitable for many high power switching and bidirectional transistor applications. It has a high maximum current-carrying capacity and a wide range of possible gate control voltages, which makes it ideal for motor control and light dimmer circuits. The device is also highly resistant to high voltage breakdowns due to its enhanced dielectric isolation. The working principle of the device is that it is switched off using an electric field, or EMF, and turned on again using a reverse bias voltage.

AOT5B60D	Alpha & ...	--	1000	IGBT 600V 10A 82.4W TO220...
AOT5B65M1	Alpha & ...	1.06 $	924	IGBT 650V 5A TO220IGBT 6...
AOT5N50	Alpha & ...	--	679	MOSFET N-CH 500V 5A TO-22...
AOT502	Alpha & ...	--	1000	MOSFET N-CH 33V 9A TO220N...
AOT5N60	Alpha & ...	--	1000	MOSFET N-CH 600V 5A TO-22...
AOT5N50_001	Alpha & ...	0.0 $	1000	MOSFET N-CH 500V 5A TO-22...
AOT5N100	Alpha & ...	--	1000	MOSFET N-CH 1000V 4A TO22...
AOT500	Alpha & ...	--	1000	MOSFET N-CH 33V 80A TO220...